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1、AvalancheCharacteristicsandRatingsofPowerMOSFETGiovanniPriviteraProduct&ApplicationengineeringPowerMOSFETDivisionSTMicroelectronicsCataniaItalySourceGate1.1IntroductionDBackinthemid80's,powerMOSFETmanufacturersstartedtoclaimanewoutstandingfeature:theAvalancheRuggedness.CSu
2、ddenly,newfamiliesofdevicesevolved,allwiththis“new”P+PGRpfeature.Theimplementationwasquitesimple:theverticalN-MOSFETstructurehasanintegralbodydraindiode,whichN+cannotbeeliminated.So,bychangingsomeprocessandlayoutSparameters,itispossibletoguaranteetheuseoftheclampingDrainca
3、pabilityofthisdiodeinwithstandingaccidentalvoltage/powersurgesbeyondthenominaldrainsourcevoltage,Figure1MOSFETverticalstructureandparasiticelementsOfcoursetheconfusionaboutthemeaningofruggedness,andFigure1referstothewellknownSTpatentedhighvoltagehowtoratethisinthedatasheet
4、wassohuge,coupledwiththeTMMOSFETstructure,MESHOVERLAYexceptsomepoortheoreticalknowledgeofit.processoptimizationoftheshapeofthebody-drainjunctionDespitethis,allPowerMOSFETmanufacturersstartedtoandotherimportantimprovementsintheMESHoverlayproduceavalancherateddevices,propose
5、datasheetratingsdesign.Theconceptofthisverticalstructurecouldbe(althoughimperfect),toprotectthemselvesandtheendusers,consideredvalidalsoforvariousoldercellularorotherfromthisincompleteknowledge.technologies.Today,knowledgeondevice’sbehaviorduringavalancheDuringonstate,whil
6、ethegatesourcevoltageisabovetheconditionsisenhanced.Alotofapplicationnotesandpapersthreshold,theconductioncurrentislocalizedinthedrainandwereissuedwithdifferentapproachestoexplainratingsandintheregionbelowthegate(channel).Duringoffstatetheavalanchebehavior.Thescopeofthisno
7、teistobrieflyreviewVoltagedropacrossdrainandsourceissustainedbythePNtheMOSFETphysicsonavalanchetosupplydesignerswithjunctionatreversebias,andaverysmallcurrent(leakage)toolsandhintstodealwithavalancheissues.flowsthroughthejunction.1.2MOSFETfundamentalsIfthevoltageincreasest
8、oomuchandtheelectricalfieldreachesthecriticalvalue,thejunctiongoestobreakdown,andThebasic
