Transport properties of an armchair boron-nitride nanoribbon embedded between two graphene electrodes

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1、PhysicaE43(2011)1751–1754ContentslistsavailableatScienceDirectPhysicaEjournalhomepage:www.elsevier.com/locate/physeTransportpropertiesofanarmchairboron-nitridenanoribbonembeddedbetweentwographeneelectrodesnM.Modarresi,M.R.Roknabadi,N.ShahtahmasbiDepartmentofPhysics,FerdowsiUniversityof

2、Mashhad,IranarticleinfoabstractArticlehistory:Transportpropertiesofanarmchairboron-nitridenanoribbon(ABNNR)betweentwoarmchairReceived22December2010graphenenanoribbons(AGNRs)havebeenstudiedusingthetightbindingapproachinthenearestReceivedinrevisedformneighborapproximation.Thetightbidingp

3、arametersareobtainedbycomparingthetightbinding2March2011bandstructureofpureanddopedhexagonalboron-nitridesheetwithfirst-principlecalculations.ItisAccepted5June2011shownthatbyincreasingtheribbonwidthtransmissionthroughthesystemincreases.AlsotheAvailableonline12June2011conductancegaphasad

4、ampingoscillationwiththeBNNRwidth.&2011ElsevierB.V.Allrightsreserved.1.IntroductionSlaterandKoster[13].Theyexpandtheeignstatesofcrystalusingtheatomicorbitals;asaresultthebasissetforexpansionismuchInrecentyearsthepropertiesofhexagonalboron-nitridesmallerthanthebasissetinplanewaveexpansi

5、on.Inthetight(h-BN)havebeenstudiedindetail,boththeoreticallyandexperi-bindingmodeltheHamiltonianofpelectronscanbewrittenasmentally[1–4]Althoughthestructureofh-BNissimilartoXXH¼eCþCþtðCþCþCþCÞð1Þgraphene,ithasdifferentelectronicproperties;grapheneisahBNiiii,iþ1iiþ1iþ1iiizero-gapsemimet

6、al[5,6]andh-BNshowsinsulatingcharacter-istics[1].High-purityh-BNcrystalsweresynthesizedathighandwhereeiandti,iþ1showtheonsiteenergyandhoppingintegralþatmosphericpressure[3,4].h-BNemitslightinthedeepultra-betweennearestsites,respectively.TheoperatorCi(Ci)createsvioletregion,whichhasalar

7、gepotentialapplicationsuchas(annihilates)apelectronattheithsiteofBNNR.Weconsiderainformationstoragetechnology,environmentalprotection,andperiodicallyrepeatedunitcellwithlatticevectorsRl.Thehex-medicaltreatment[3].Theelectronicstructureofdefectsinaagonalunitcell,whichisusedforcalculat