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1、Availableonlineatwww.sciencedirect.comMicroelectronicsReliability48(2008)445–454www.elsevier.com/locate/microrelThermaltransientcharacteristicsofdieattachinhighpowerLEDPKGHyun-HoKim*,Sang-HyunChoi,Sang-HyunShin,Young-KiLee,Seok-MoonChoi,SungYiPKGTechnologyTeam,SamsungElect
2、ro-MechanicsCo.,Ltd.,RepublicofKoreaReceived4January2007;receivedinrevisedform16August2007Availableonline22October2007AbstractThereliabilityofpackagedelectronicsstronglydependsonthedieattachqualitybecauseanyvoidorasmalldelaminationmaycauseinstanttemperatureincreaseinthedie
3、,leadingsoonerorlatertofailureintheoperation.DieattachmaterialshaveakeyroleinthethermalmanagementofhighpowerLEDpackagesbyprovidingthelowthermalresistancebetweentheheatgeneratingLEDchipsandtheheatdissipatingheatslug.Inthispaper,thermaltransientcharacteristicsofdieattachinhi
4、ghpowerLEDPKGhavebeenstud-iedbasedonthethermaltransientanalysisusingtheevaluationofthestructurefunctionoftheheatflowpath.WithhighpowerLEDpackagesfabricatedbydieattachmaterialssuchasAgpaste,solderpasteandAu/Sneutecticbonding,wehavedemonstratedforchar-acteristicssuchascross-s
5、ectionanalysis,sheartestandvisualinspectionaftersheartestofdieattachandhowtodetectdieattachfailuresandtomeasurethermalresistancevaluesofdieattachinhighpowerLEDPKG.Fromthedifferentialstructurefunctionofthethermaltransientcharacteristics,wecouldknowtheresultthatdieattachquali
6、tyofAu/Sneutecticbondingwiththethermalresistanceofabout3.5K/WwasmuchbetterthanthisofAgpasteandsolderpastewiththethermalresistanceofabout11.5–14.2K/Wand4.4–4.6K/W,respectively.Fromthisresults,itispossibletofabricatehighpowerLEDwithasmallthermalresistanceandagooddieattachqua
7、litybyapplyingAu/Sneutecticbondingdieattachwithahighreliabilityandagoodrepeatability.Ó2007ElsevierLtd.Allrightsreserved.1.Introductionsientanalysisthathasbeenusedtoevaluatethethermalbehaviorofallofpackagesforalongtime[1].RecentlywiththebeginningofhighpowerLEDPKG,Thisisthem
8、ethodthatthetimedependenceoftemper-therequirementofdrivecurrentincreasingpowercon-atureis