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1、MICROELECTRONICCIRCUITDESIGNFourthEditionRichardC.JaegerandTravisN.BlalockAnswerstoSelectedProblems–Updated2/27/11Chapter11.41.52years,5.06years1.51.95years,6.46years1.8402MW,1.83MA1.102.50mV,5.12V,5.885V1.1219.53mV/bit,1001100021.1414bits,20bits1.160.003A,0.003cos(1000t)A1.19vDS=[5+
2、2sin(2500t)+4sin(1000t)]V1.2015.7V,2.32V,75.4µA,206µA1.22150µA,150µA,12.3V1.2439.8Ω,0.0251vs-31.2756kΩ,1.60x10vs81.291.50MΩ,7.50x10ii1.3650/−12°,10/−45°1.38-82.4sin750πtmV,11.0sin750πtµA1.401+R2/R11.42-1.875V,-2.500V1.43Band-passamplifier1.4550.0sin(2000πt)+30.0cos(8000πt)V1.480V1.47
3、[4653Ω,4747Ω],[4465Ω,4935Ω],[4230Ω,5170Ω]o1.556200Ω,4.96Ω/C1.613.29,0.995,−6.16;3.295,0.9952,−6.1552Chapter22.3500mA2.4160Ω,319Ω-431331532.6ForGe:2.63x10/cm,2.27x10/cm,8.04x10/cm,2.9305.2K6542"1022.10"1.75x10cms,+6.25x10cms,2.80x10Acm,1.00x10Acm!62-1022.111.60x10A/cm,1.60x10A/cm22.13
4、4ΜΑ/cm!722.161.60x10A/cm,4.00A2.17316.6K2.22Donor,acceptor2.23200V/cm42.251.25x10atoms183393-1032.27p-type,6x10/cm,16.7/cm,5.28x10/cm,8.80x10/cm17332.293x10/cm,333/cm163532.304x10/cm,2.50x10/cm3183222.3440/cm,2.5x10/cm,170cm/s,80cm/s,p-type,31.2mΩ-cm16343222.3610/cm,10/cm,800cm/s,220
5、cm/s,n-type,2.84Ω-cm2032.381.16x10/cm1932.401.24x10/cm2.41Yes—addequalamountsofdonorandacceptorimpurities.Thenn=ni=p,butthemobilitiesarereduced.SeeProb.2.44.2132132.436.27x10/cm,6.22x10/cm1932.462.00/Ω-cm,2.50x10/cm2.4875K:6.64mV,150K:12.9mV,300K:25.8mV,400K:34.5mV22.49-28.0kA/cm522.
6、501.20x10exp(-5000x/cm)A/cm,12.0mA2.541.108µm-223223-23-242.578atoms,1.60x10cm,5.00x10atoms/cm,3.73x10g,1.66x10g/proton3Chapter3-353.10.0373µm,0.0339µm,3.39x10µm,0.979V,5.24x10V/cm18323183233.410/cm,10/cm,10/cm,10/cm,0.921V,0.0488µm3.66.80V,1.22µm23.10640kA/cm2143.131.00x10/cm3.17290
7、K3.20312K3.211.39,3.17pA3.220.791V;0.721V;0A;9.39aA,-10.0aA3.251.34V;1.38V3.280.518V;0.633V3.29335.80K,296.35K3.330.757V;0.717V3.35−1.96mV/K3.390.633V,0.949µm,3.89µm,12.0µm3.40374V3.424V,0Ω23.4410.5nF/cm;232pF3.46800fF,20fC;20pF,0.5pC3.509.87MHz;15.5MHz3.510.495V,0.668V3.530.708V,0.7
8、18V;0.808V3.
