资源描述：
《A Metal−Oxide−Si Field Effect Plasmonic Modulator》由会员上传分享，免费在线阅读，更多相关内容在学术论文-天天文库。
1、NANOLETTERSPlasMOStor:AMetal-Oxide-SiField2009Vol.9,No.2EffectPlasmonicModulator897-902JenniferA.Dionne,,KennethDiest,LukeA.Sweatlock,§andHarryA.Atwater*ThomasJ.WatsonLaboratoriesofAppliedPhysics,CaliforniaInstituteofTechnology,MailCode128-95,Pasadena,California91125Received
2、December22,2008;RevisedManuscriptReceivedJanuary5,2009ABSTRACTRealizationofchip-basedall-opticalandoptoelectroniccomputationalnetworkswillrequireultracompactSi-compatiblemodulators,ideallycomprisingdimensions,materials,andfunctionalitysimilartoelectroniccomplementarymetal-ox
3、ide-semiconductor(CMOS)components.Herewedemonstratesuchamodulator,basedonfield-effectmodulationofplasmonwaveguidemodesinaMOSgeometry.Near-infraredtransmissionbetweenanopticalsourceanddrainiscontrolledbyagatevoltagethatdrivestheMOSintoaccumulation.Usingthegateoxideasanopticalc
4、hannel,electro-opticmodulationisachievedindevicevolumesofhalfofacubicwavelengthwithfemtojouleswitchingenergiesandthepotentialforgigahertzmodulationfrequencies.TheintegratedcircuitsubiquitousinmoderntechnologywereUseofplasmoniccomponentsoffersauniqueopportunitycriticallyenabl
5、edbytheinventionofthemetal-oxide-foraddressingthesizemismatchbetweenelectricalandsemiconductorfieldeffecttransistor(MOSFET)sathree-opticalcomponents.Plasmonicdevicesconvertopticalsig-terminaldevicethatmodulatescurrentflowbetweenasourcenalsintosurfaceelectromagneticwavespropaga
6、tingalonganddrainviaanappliedelectricfield.Sincethefirstmetal-dielectricinterfaces.Becausesurfaceplasmonsex-successfuldemonstrationofMOSFETsinthe1960s,siliconhibitextremelysmallwavelengthsandhighlocalfielddevicesandcircuitshavecontinuouslyscaledaccordingtointensities,opticalcon
7、finementcanscaletodeepsubwave-Moore’slaw,increasingboththeintegrationdensityandlengthdimensionsinplasmonicstructures.bandwidthofcomplementarymetal-oxide-semiconduc-Recentreportshavedemonstratedpassiveandactivetor(CMOS)networks.Atpresent,microprocessorscontainplasmoniccomponen
8、tsthatcombinelowopticallosswithover800milliontransistorsclockedat3GHz,witht
