Charge noise in liquid-gated single-wall carbon nanotube Transistors

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1、NANOLETTERSChargeNoiseinLiquid-Gated2008Vol.8,No.2Single-WallCarbonNanotube685-688TransistorsJaanMa1nnik,IddoHeller,AnneM.Janssens,SergeG.Lemay,andCeesDekker*KaVliInstituteofNanoscience,DelftUniVersityofTechnology,Lorentzweg1,2628CJDelft,TheNetherlandsReceivedDecember14

2、,2007ABSTRACTThenoisepropertiesofsingle-walledcarbonnanotubetransistors(SWNT-FETs)areessentialfortheperformanceofelectroniccircuitsandsensors.Here,weinvestigatethemechanismresponsibleforthelow-frequencynoiseinliquid-gatedSWNT-FETsanditsscalingwiththelengthofthenanotubec

3、hanneldowntothenanometerscale.Weshowthatthegatedependenceofthenoiseamplitudeprovidesstrongevidenceforarecentlyproposedcharge-noisemodel.WefindthatthepowerofthechargenoisescalesastheinverseofthechannellengthoftheSWNT-FET.Ourmeasurementsalsoshowthatsurprisinglytheionicstr

4、engthofthesurroundingelectrolytehasaminimaleffectonthenoisemagnitudeinSWNT-FETs.Carbonnanotube-basedtransistorshaveattractedconsider-contactmetal16hasbeendiscussedinthepast.Themajorityableinterestascomponentsofelectroniccircuitsandofthesestudiescompareexperimentallymeas

5、urednoisesensors.1InherentelectricalnoisedeterminestheperformancemagnitudesinSWNT-FETs5,7,12,14-16totheempiricalHoogelimitsofthesedevices.Thewell-establishedhighsensitivitymodel.17,18ThelatterstatesthatA)R/Nc,whereNcistheofsingle-walledcarbonnanotubetransistors(SWNT-FET

6、s)numberofchargecarriersinthenanotube,andRisaasbiomoleculardetectors2-4implicatesthatvariousfluctuat-constant.Thismodelsuggeststhatnoiseiscausedbyingentitiesintheenvironmentleadtoahighlevelofnoiseindependentscatteringeventsofchargecarriers,whichleadinthesedevices.Unders

7、tandingtheoriginandmechanismtoa1/Ncdependence.Recently,Tersoff10hasproposedanofthisnoiseisessentialtoutilizeSWNT-FET-baseddevicesalternativemodelthatassumesthattheSWNT-FETisoptimallyandtoimprovethem.Forfutureapplicationsinaffectedbyrandomfluctuationsofchargeinitsenviron

8、ment.truenanoscalejunctions,itisofinteresttoestablishtheInthisso-calledcharge-noisemodel,SIµ(dI/dVg)2andscalin