AlGaN_GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

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1、JapaneseJournalofAppliedPhysicsINVITEDREVIEWRelatedcontent-ImpactofoxygenplasmatreatmentontheAlGaN/GaNhigh-electron-mobilitytransistordynamicon-resistanceofAlGaN/GaNhigh-electron-mobilitytransistorstechnologyforhigh-voltageandlow-on-resistanceJoelT.Asubar,YoshikiSakaida,SatoshiYoshidaet

2、al.operation-HighlyreducedcurrentcollapseinAlGaN/GaNhigh-electron-mobilitytransistorsbycombinedapplicationofTocitethisarticle:MasaakiKuzuharaetal2016Jpn.J.Appl.Phys.55070101oxygenplasmatreatmentandfieldplatestructuresJoelT.Asubar,SatoshiYoshida,HirokuniTokudaetal.-The2018GaNpowerelectro

3、nicsroadmapViewthearticleonlineforupdatesandenhancements.HAmano,YBaines,EBeametal.Recentcitations-Structuralstabilityandelectronicpropertiesofthe(0001)inversiondomainboundaryinIII-nitridesSiqianLietal-GaN-baseddouble-gate(DG)sub-10-nmMOSFETs:effectsofgateworkfunctionIbrahimMustafaMehedi

4、etal-ImpactofroundedelectrodecornersonbreakdowncharacteristicsofAlGaN/GaNhigh-electronmobilitytransistorsTaiseiYamazakietalThiscontentwasdownloadedfromIPaddress60.186.211.6on04/08/2018at08:20JapaneseJournalofAppliedPhysics55,070101(2016)INVITEDREVIEWhttp://doi.org/10.7567/JJAP.55.070101

5、AlGaN/GaNhigh-electron-mobilitytransistortechnologyforhigh-voltageandlow-on-resistanceoperationMasaakiKuzuhara,JoelT.Asubar,andHirokuniTokudaGraduateSchoolofEngineering,UniversityofFukui,Fukui910-8507,JapanReceivedOctober27,2015;acceptedApril19,2016;publishedonlineJune10,2016Inthispaper

6、,wegiveanoverviewoftherecentprogressinGaN-basedhigh-electron-mobilitytransistors(HEMTs)developedformainstreamacceptanceinthepowerelectronicsfield.ThecomprehensiveinvestigationofAlGaN/GaNHEMTsfabricatedonafree-standingsemi-insulatingGaNsubstraterevealsthatanextractedeffectivelateralbreakd

7、ownfieldofapproximately1MV/cmislikelylimitedbytheprematuredevicebreakdownoriginatingfromtheinsufficientstructuralandelectricalqualityofGaNbufferlayersand/ortheGaNsubstrateitself.Theeffectivelateralbreakdownfieldisincreasedto2MV/cmbyusingahighlyresistiveGaNsubstrateachievedbyheavyF