耐高温金属与硬质合金.pdf

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1、Int.JournalofRefractoryMetalsandHardMaterials41(2013)85–89ContentslistsavailableatScienceDirectInt.JournalofRefractoryMetalsandHardMaterialsjournalhomepage:www.elsevier.com/locate/IJRMHMFabricationofdiamondparticlesreinforcedAl-matrixcompositesbyhot-presssinteringJianpingLong,XinLi,DediF

2、ang,PengPeng,QiangHeCollegeofMaterialsandChemistry&ChemicalEngineering,ChengduUniversityofTechnology,Chengdu610059,People'sRepublicofChinaarticleinfoArticlehistory:Received22October2012Accepted8February2013Keywords:Vacuumhot-pressingsinteringDiamond/AlElectronicpackagingThermalconductivi

3、tyCoefficientofthermalexpansionabstractAl-matrixcompositesreinforcedby50vol.%diamondparticlesundera60MPasinteringpressurewerefab-ricatedbyavacuumhot-pressingmethod.Thecompositeobtainedarelativedensityof96.5%.Thecoefficientofthermalexpansion(CTE)andthethermalconductivity(TC)ofthediamond/

4、Alcompositesweremeasuredbythelaserflashmethodanddifferentialdilatometry,respectively.Resultsshowedthatdiamond/AlcompositeshavehighTCandlowCTEwithhighsinteringpressure(60MPa)andhighvolumefractionsofdiamondparticles(50vol.%).TheTCofthe50vol.%diamond/Alcompositewas321W/mK,whichis112W/mKhigh

5、erthanthatofpureAl(209W/mK).Attemperaturesrangingfrom298Kto573K,thecom-positeobtainedlowCTEsintherangeof13.2×10−6/Kto8.3×10−6/K,whichsatisfiedtheCTEofelectronicpackagingmaterials.TheCTEvaluesobtainedintheexperimentwereapproximatelyequaltotheCTEcalcu-latedbytheKernermodel[17].Theeffectsof

6、volumefractionsofdiamondparticlesandsinteringpressureonthedensity,TC,andCTEofdiamond/Alcompositeswereinvestigated.©2013ElsevierLtd.Allrightsreserved.1.IntroductionBothminiaturizationofelectroniccomponentsandincreaseinpackagingdensityinmicroelectronicandsemiconductordevicesleadtoproblemst

7、hatpreventcurrentlyusedelectronicpackagingmaterialsfrommeetingtherequirementsofaheatsinkandaheatspreader[1,2].Anewelectronicpackagingmaterialwithhighthermalconductivity(TC)andlowcoefficientofthermalexpansion(CTE)mustbedevelopedtoincreasethereliabilityofelectronicpackaging