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1、A95%EfficientNormally-OffGaN-on-SiHEMTHybrid-ICBoost-Converterwith425-WOutputPowerat1MHzBrianHughes,YeongY.Yoon,DanielM.Zehnder,andKarimS.BoutrosHRLLaboratories,Malibu,CA90265,USA.e-mail:bhughes@hrl.comphone(310)3175576FAX(310)3175152Abstract------A2:1351Vhard-switchedboost
2、converterwasAmajorchallengeforGaNdevicesistoscaledevicesforconstructedusinghigh-voltageGaNhigh-electron-mobilityhighpowerapplicationswithcurrentsrangingfrom2to200A,transistorsgrownonSisubstratesandGaNSchottkydiodeswhileachievingefficiencyhigherthanSisuperjunctiongrownonSapp
3、hiresubstrates.Thehighspeedandlowon-MOSFETsandSiIGBTsathigherswitchingfrequencies(100resistanceoftheGaNdevicesenablesextremelyfastswitchingKHzto1MHz)andmaintainingcompetitiveprices.Herewetimesandlowlosses,resultinginahighconversionefficiencyofpresentthefirstallGaNboostconve
4、rterwithnormally-off,95%with425-Woutputpowerat1MHz.Theboostconverter3highbreakdownvoltage,GaNHEMTsonSisubstratesandhasapowerdensityof175W/in.Toourknowledge,theseresultsarethebestreportedonGaNdevices,andthehighestfor1MHzGaNSchottkydiodesonSapphiresubstrates.switching.IndexTe
5、rms------Converter,efficiency,GaN,highvoltage,highVinGaNdiodeVoutelectron-mobilitytransistors(HEMTs),powerdevice,switchingpowersupply.DI.INTRODUCTIONGGaN-baseddevicesareoutstandingcandidatesforfutureNormally-offhigh-efficiencypowerelectronicsapplications.AsawideSGaNHEMTband
6、gapsemiconductorwithalargebreakdowncriticalfieldandhighelectronmobilityenabledwith2DEGhetero-junction2FETs,GaNmaterialhasaBaliga(BV*/Ron*Area)figureofFig.1.SimpleschematicofGaNboostconverter.Fora50%dutycycle,meritmorethan100XhigherthanSimaterial.GaNswitchesVoutofboostconver
7、teris2XVinareprojectedtohavemuchlowerresistanceforthesamebreakdownvoltage,andconsequentlybemoreefficient.II.HEMTFABRICATIONANDBOOSTCONVERTERGaN’shigherbreakdowncriticalfieldandmobilitycanreduceCONSTRUCTIONswitchingtimesandswitchinglosses.GaNswitcheshavethepotentialtooperate
8、efficientlyathigherfrequenciesthanSiThisletterdescribestheperformanceofhigh-voltag
