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1、Photo:Rawmaterial:Reticle,PhotoResistEquipment:I-Line(MUV),DUV,EUV(Stepper,SCANNER)Vendors:Nikon,ASML2.Moduledefinition-PHOTOThePHOTOconceptwasgeneralOpticslithographytoreproducethespecificpatterns.TodaywedeployedtheUVExcimerlaserforthelight,AccordingtoOpticsprinciple,generallythewavel
2、engthofthelightshouldbelessthanonetenthofhalfpitch,soifthetechnologyshrink,theExposurelightsourceshouldbepushedintodeeplyUVzone.Thin-Film:Rawmaterial:MetalTarget,ChemicalEquipment:Sputter,RTP,CVD(AP,PE,LP,SP,MO),ScubberVendors:AMAT,Novellus,TEL,ASM…..2.Moduledefinition-ThinFilmIngenera
3、lwecansplittheThin-Filmintotwofield,oneisPhysicsdominated(PVD),theotherisChemicaldominated(CVD)ThePVDmeansthatnochemicalreactionassistedintheprocess,justsimplyacceleratedAratomtobombardthetargettoevaporatethetargetanddepositonthewafer,suchlikesSputter.TheCVDmeansthatthechemicalreaction
4、onthewaferorchambertodepositafilmonthesurfaceCVDPVDChemicalreactionEtchRawmaterial:Solvent,ReactivegasEquipment:DryEtch(RIE),WetBench(ChemicalStation)Vendors:AMAT,Novellus,TEL,ASM…..2.Moduledefinition-ETCHIngeneralwecancallthatRIEinthetermofDryetching,thedryetchingwhichdominatedbythePh
5、ysicalIonbombardandchemicalreactionwiththesurfacetoevaporatedthebyproducts.ReactiveionbombardDiffusionRawmaterial:ChemicalGas,IsotopegasEquipment:Implanter,FurnaceVendors:Eaton,Varian,KE,TEL...2.Moduledefinition-DiffusionInthediffusion,there’retwomethodstodeliverthedopantintothesilicon
6、wafer:.Implant:Toacceleratetheisotopeanddirectbombardthewafertodeliverthedopantintorightdepthwithrightconcentration..Furnace:Tousethermaldiffusionpotentialtodeliverthedopantintorightdepthwithrightconcentration.CMPRawmaterial:Slurry,polishpadEquipment:CMP(W-CMP,Oxide-CMP,Cu-CMP)Vendors:
7、AMAT,COBAT,Strasbaugh2.Moduledefinition-CMPIngeneral,theCMPlikethepolisharts,butdeployedthechemical-mechanicalassistant.There’retwofactorsdominatedtheCMPprocess:.Firstischemicalhydrolysisslurrytohydrolyzethesurface,.Secondistheslurryabrasivetoremovethehydrolytewhichunderthemechanical
