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1、NanoStructuredMaterials,Vol.11,No.8,pp.1111±1122,1999PublishedbyElsevierScienceLtdPergamonPrintedintheUSA.Allrightsreserved.0965-9773/99/$±seefrontmatterPIIS0965-9773(99)00401-8THRESHOLDBEHAVIORINTHEFORMATIONOFNANOSCALESILICONPARTICLESPREPAREDBYSPUTTERING
2、D.H.Pearson*andA.S.Edelstein**NavalResearchLaboratory,4555OverlookAvenue,S.W.,Washington,DC20375(ReceivedJune14,1999)(AcceptedOctober25,1999)AbstractÐDCmagnetronsputteringofsiliconwascarriedoutat175wattsinargongasatpressuresfrom100mtorrto900mtorr.Sputterd
3、epositswerecollectedonanarrayoftransmissionelectronmicroscopy(TEM)gridsplacedbetweenthesputtersourceandacold-fingerlocated10.5cmabovethesputtersource.TheresultingdepositswereanalyzedbyTEM,andthemorphologieswerefoundtoincludegranularfilms,well-definedparti
4、cles5±13nmindiameter,andtransitionmorphologiesbetweenthatofparticlesandgranularfilms.Theresultingmorphologymap,asafunctionofsputteringpressureandTEM-gridlocation,indicatedthatparticlesweremorelikelytoformathigherpressuresandlocationsfartherfromthesource.I
5、naddition,resultsobtainedbyvaryingthecold-fingertemperatureandthesputter-source/cold-fingerdistanceindicatedthatthetemperatureofthecold-fingercanplayasignificantroleinparticleformationatsmallsputter-source/cold-fingerseparations.Depositswithgranular-filmm
6、orphologieswereamorphousundermostconditions.However,depositscontainingparticlesexhibitedthediamond-cubiccrystallinephaseundersomeconditionsaswellastheamorphousphase.PublishedbyElsevierScienceLtdIntroductionThetechniqueofgascondensationhasbeenusedformoreth
7、anfiftyyearsforthepreparationofultrafineparticlesofmetalsandoxides(1,2).Traditionallyinthismethod,amaterialisevaporatedinachambercontaininggasatahighfromathermalsource.Becausecollisionswiththegasatomslimitthemeanfreepath,supersaturationcanbeachievedinthev
8、aporandparticlesnucleateandgrow(3).Morerecently,ithasbeenshownthatmagnetronsputteringinahigh-pressuregasmaybeusedtopreparenanoscaleparticlesinasimilarmanner(4±6).Theuseofmagnetronsputteringinsuchexperimentsisdesirab
