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1、st21CenturyProductAnalysisElectronBeamTools-110ElectronBeamTools.....................................................................................210.1VoltageContrast.........................................................................................210.1

2、.1SecondaryElectronImaging.............................................................310.1.2StaticVoltageContrast.....................................................................610.1.3CapacitiveCouplingVoltageContrast.......................................

3、.....1010.1.4PassiveVoltageContrast................................................................1310.1.5ElectronBeamProbing...................................................................1510.2ElectronBeamInducedCurrent......................................

4、......................1810.3ResistiveContrastImaging....................................................................2110.4Charge-InducedVoltageAlteration.......................................................2410.4.1HighBeamEnergyCIVA.........................

5、......................................2410.4.2LowBeamEnergyCIVA...............................................................2710.5References............................................................................................30©2002,Semitracks,Inc.stElec

6、tronBeamTools-221CenturyProductAnalysis10ElectronBeamToolsThescanningelectronmicroscope(SEM)hasbecomeasstandardatoolforICfailureanalysisastheopticalmicroscope.TheSEM'sadvantagesoverlightmicroscopyincludeagreatlyincreaseddepthoffield,muchhighermagnification,increa

7、sedworkingdistance,andimprovedimagingofsurfacetopography.TheuseoftheSEMforsurfaceimagingwasdescribedinChapter7.Inadditiontomorphologyimaging,theinteractionoftheelectronbeamwithanelectronicdeviceenablesuniqueimagingandanalyticalcapabilities.Agiventechniquesstrengt

8、hs,limitations,andeffectsuponthedevicebeinganalyzedmustbeunderstoodtousetheSEMeffectively.SEMsettingsthatareappropriateforonetechniquemaybeunsuccessful,provide