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1、硅酸盐学报第38卷第8期Vol.38,No.82010年8月JOURNALOFTHECHINESECERAMICSOCIETYAugust,2010残余碳对碳化硅陶瓷光学表面加工性能的影响111,21刘桂玲,陈健,黄政仁,刘学建(1.中国科学院上海硅酸盐研究所,结构陶瓷工程中心,上海200050;2.中国科学院上海硅酸盐研究所,高性能陶瓷和超微结构国家重点实验室,上海200050)摘要:为深入了解碳化硅陶瓷的光学表面加工性能,采用常压固相烧结法制备了碳化硅陶瓷,在保证致密度的前提下,通过改变碳的含量,研究了残余碳对SiC陶瓷抛光面的表面质量和
2、光学性能的影响。研究发现,C的质量含量为3%~7%时,SiC陶瓷抛光表面的RMS(rootmeansquare)粗糙度均约为2nm。当C含量为3%~6%时,SiC陶瓷抛光表面在400~750nm波段的全反射率、漫反射率和镜面反射率无明显变化;当C含量升至7%时,全反射率稍有降低,漫反射率稍有上升,镜面反射率稍有降低。其原因可能是过多的残余碳引起SiC陶瓷的折射率下降和产生光学散射,最终造成镜面反射率降低。关键词:碳化硅;残余碳;光学表面加工;反射率中图分类号:TH16文献标志码:A文章编号:0454–5648(2010)08–1523–04E
3、FFECTOFRESIDUALCARBONONOPTICALSURFACEMACHININGQUALITYOFSILICONCARBIDECERAMICS111,21LIUGuiling,CHENJian,HUANGZhengren,LIUXuejian(1.StructuralCeramicsEngineeringCenterofShanghaiInstituteofCeramics,ChineseAcademyofScience,Shanghai200050;2.StateKeyLaboratoryofHighPerformanceCer
4、amicsandSuperfineMicrostructure,ShanghaiInstituteofCeramics,ChineseAcademyofScience,Shanghai200050,China)Abstract:Inordertofurtherstudythemachiningqualityofopticalsurfaceofsiliconcarbide(SiC)ceramics,denseSiCceramicswerepreparedbypressurelesssinteringtechnique.Theeffectofre
5、sidualcarbononsurfacequalityandtheopticalpropertiesofSiCceramicsafterpolishingwereinvestigatedbychangingthecarboncontentwithconstantdensity.Theexperimentalresultsshowthatwhenthecarboncontentis3%–7%inmass,thesurfaceRMS(rootmeansquare)roughnessofpolishedSiCceramicsremainsatal
6、evelofabout2nm.Whenthecarboncontentisrangedat3%–6%inmass,thetotalreflectance,diffusedreflectanceandspecularreflectanceofSiCceramicsafterpolishingwithin400–750nmwavelengthrangedonotchangesignificantly.Whenthecarboncon-tentincreasesto7%,thetotalreflectancedecreasesinsomesort,
7、thediffusedreflectanceincreases,andthespecularreflectancede-creases.ThereasonmightbethattheexcessivecarbonresidualcausesthereflectiveindexofSiCceramicsdecreasing,andgeneratingopticaldiffusion,finallyresultinginthereductionofspecularreflectance.Keywords:siliconcarbide;residu
8、alcarbon;opticalsurfacemachining;surfaceroughness;reflectance[1–2]碳化硅材料具有一系列优良的物理化