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ID:39136130
大小:4.66 MB
页数:49页
时间:2019-06-25
《氧化镓籽晶层的制备与其对外延生长氧化镓薄膜的影响》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、氧化镓籽晶层的制备及其对外延生长氧化镓薄膜的影响PreparationofGa203seedlayeranditsinfluenceontheepitaxialgrowthofGa203filmsAbstractWiththerapiddevelopmentofoptoelectronicsemiconductortechnology,moreandmorepeoplegetinfavorofthebroadbandgapsemiconductormaterials.Galliumoxide(Ga203)isakindo
2、fbroadbandgapsemiconductormaterialofIII—VIgroups.Thep-Ga203isthemoststabletypeinthesefiveisomers.ThedirectbandgapofGa203iswide(4.2eV-4.9eV),andithasgoodchemicalstabilityandthermalstability,SOithasbroadapplicationprospects,suchasthedeepultraviolettransparentconduc
3、tivefilm,ultravioletdetectors,thinfilmelectroluminescentdevices,gassensor,andfieldeffecttransistor.Inthispaper,Ga203seedlayerwasfabricatedonsapphiresubstrates(A1203)byRFmagnetronsputteringtechnology,andthesapphiresubstratewiththeseedlayerwasannealedtreatment..The
4、nGa203filmswerefabricatedonsapphiresubstrateswithseedlayerandwithoutseedlayerbyMOCVDtechnology.1.Ga203filmswerefabricatedonsapphiresubstratesbylow-pressureMOCVDtechnology.ThecrystalandopticalqualityofGa203thinfilmswasinvestigatedbyX-raydiffractionandopticaltransm
5、ittancespectra.TheGa203filmisamorphousthatgrowndirectlyonthesapphiresubstrateandthetransmittanceandtheopticalbandgapwidthoftheGa203filmsareverysmall.Theexperimentshowsthat,thecrystalqualityandtheopticalpropertiesoftheGa203filmsarenotidealwhentheGa203filmswerefabr
6、icateddirectlyonsapphiresubstratesbyusinglow—pressureMOCVDtechnology.2.Inordertosolvetheaboveproblem,Ga203seedlayerwasfabricatedonthesapphiresubstratebyRFmagnetronsputtering,thenthe13-Ga203filmswerefabricatedonsapphiresubstrateswiththeseedlayerbylow-pressureMOCVD
7、technology.Theexperimentshowsthat,RelativetotheGa203filmsfabricateddirectlyonsapphiresubstrates,thecrystalqualityandtheopticalpropertiesoftheGa203filmsfabricatedonsapphiresubstrateswithGa203seedlayerhaveimproved,butnotevidently.3.TheGa203seedlayerwasannealedatahi
8、ghtemperature,thenthep-Ga203filmswerefabricatedonsapphiresubstrateswiththeannealedseedlayerbylow-pressureMOCVDtechnology.TheXRDshowsthat,theGa203filmshavetheob
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