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ID:39132756
大小:2.37 MB
页数:76页
时间:2019-06-25
《硅基ZnO材料生长与硅基GaN交通绿LED老化性能分析》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、硕士学位论文硅基ZaaO材料生长与硅基CaN交通绿LED老化性能研究GrowthofZIllOthinfilmsollSisubstrateAndagingtestofSi—basedGaNtraffic-greenLEDAbstractThisthesiscontainstwoparts:1.MOCVDgrowthofZnOthinfihllsonSi(t11、substrate;2.Si-basedCaNtraffiC—greenJi曲temittiJagdiodedegradationunderdifferentelectricalstresses.1.MOCVDgr
2、owthofZnOthinfilmsonsi(111、subsumeZnO,asawidedirect—bandsemiconductor,attractsmuchattentionasGaNinoptoelectronicsresearchfield.AlthoughrecentlytheP-i—njunctionZnOLEDhasbeenrealized,andhigh—qualityZnOfihnshavebeenreportedsomewhere,thereisstillagaptoitscormaaereialapplication.RecentlyUlOStof
3、ZnOfilmshavebeengrownonsapphire(A120s),butA1203isexpensive,electricallyinsulatingandbadthermallyconductive,whichintroducedcomplexitytodevicefabricationprocesswhengrowncrystalsareappliedtoinjection—light—emittingdevices.ButelectricallyandthennallyconductiveSiSUbstrateischeaperthanAlz03subst
4、rate,whichwillreducethecostofZnO—LED.Si,asoneofthefirstsemieonductors,hasaverymaturetechnology,suchasnlatureFabrication,nlatureintegrmionandSOon.Thus,itwillbeverygoodfbrrealizingtheoptical—electricintegrationbasedonZnO.However,duetothehighmismatchoil"thecrystalstmctureandthermalexpansionbe
5、tweenZnOfilms9ndSisubstrate,itisdifficulttodirectlygrowZnOfilmOnSisubstrate.Theretbre,inordertoimprovethequalityofthemm.differemtnaterialshavebeenintroducedbetweenZnOandSiasbuffers.ZnOfilmswerepreparedbyatmospheric-pressureMOCVDOU’Fi/Si(111)templates,withDEZn,DMZuanddeiunizedwaterasZhprecu
6、rsorsandOprecursors,respectively.AndtheeffectofthegrowthconditionOnZn0filmswasstudied.ZnOfilmswerepmparedbyatmospheric—pressureMOCVDonTi/Si(111)templates.TheTiillm011Si(111)wasdepositedbyelectronbeamevaporati011,whichis1-2rimthick.First,whenZnOfilmwasgrownwithDEZnanddeionizedwaterasZuprecu
7、rsorsand0precursors,respectively,thedifferentgrowlhlimesofthelow-temperatureZnO(LT.ZnO)¨I硕士学位论文硅基ZnO材料生妖与硅基GaN交通绿LED老化性能研究buffermakethegrownZnOfilmshavedifferentproperties.SomeoptimizinggrowthparmnetersofLT—ZnObufferWaSobtained.Second,underthesamegrowthconditi
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