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ID:39102297
大小:1.84 MB
页数:57页
时间:2019-06-24
《Epi-SOI硅片制备与表征》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、浙江大学硕士学位论文AbstractS01(SiliconOnInsulator)usedforintegratedcircuitOc)manufacturinghastwoadvantagesofincreasingspeedandreducingpowerconsumption.SIMOX(SeparatebyImplantOxygen)canbeusedt0fabricatehigh-qualityS01wafers.However,thetop-siliconlayerofSIMOX·S01wafersisverythin(typically500-300rim
2、),whichlimitstheapplicationofsuchS01waferstoacertaindegree.Fortunately,thisissuecanbecircumventedbythecombinationofepitaxyandSIMOXprocesses,whichleadstoso-calledEpi·S01wafers.Inthisthesis,theEpi—SOlwaferswerepreparedbyambientpressurechemicalvapordeposition(APCVD)processontheSIMOX-S01subs
3、trates.Bymeansofpreferentialetching,thedefectsintheas-grownEpi-S01wafersandtheannealedoneswgTedelineated.Moreover,theoutdiffusionofoxygenfromtheburiedsiliconoxide(BOX)layerofSOIsubstratesWasinvestigated.Listedbelowarethemainresultsachievedinthisthesis.1.Thedefectsintheepi-layerofEpi·S01w
4、aferdelineatedbypreferentialetchingmanifestthemselvesaspunch-throughdislocationsanddislocationpairs,whichareoriginatedfromtheSOIsubstrates.2.Thedislocationdensityintheepi-layerofEpi·S01waferdependsstronglyontheSOlsubstrate.ItWasfoundthatthedislocationdensityinEpi-S01waferusingtheS01subs仃
5、atewitha150sinthicktop-siliconlayerwasoneorderofmagnitudehigherthanthatintheEpi-SOlwaferusingtheSOIsubstratewitha200眦thicktop-siliconlayer.3.ThehightemperaturearmealingCanbeusedtoreducethedislocationdensityintheEpi—S01wafer.ItWasexperimentallyfoundthedislocationdensityintheEpi-SOlwaferWa
6、sdecreasedtodifferentdegreesbytheannealingatdifferenttemperaturesintherangeof900~1200"C.Itispreliminarilybelievedthatduringthehightemperatureannealing,thedislocationsmovetotheepi-substrateinterfaceandtheedgeofsiliconwaferwheretheyareannihilatedand,moreover,thedislocationswi廿loppositeBurg
7、ersvectorswillinteractandthusultimatelybeingannihiiated.In浙江大学硕士学位论文4.Thehi}ghtemperatureannealingofEpi·S01wa向canleadtotheoutdiffusionofoxygenintheBOXlayerofS01substrate.Suchanoxygen-outdiffusionbecomesevel'strongerwithincreasedtemperatureinthe900-1100"(3,whileitisweakene
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