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1、EnergyHarvestingandSystems2014;1(3-4):147–156SpecialIssueArticleO.Durand*,S.Almosni,Y.PingWang,C.Cornet,A.Létoublon,C.Robert,C.Levallois,L.Pedesseau,A.Rolland,J.Even,J.M.Jancu,N.Bertru,A.LeCorre,F.Mandorlo,M.Lemiti,P.Rale,L.Lombez,J.-F.Guillemoles,S.Laribi,A.PonchetandJ.StodolnaMonolithicI
2、ntegrationofDiluted-NitrideIII–V-NCompoundsonSiliconSubstrates:TowardtheIII–V/SiConcentratedPhotovoltaicsAbstract:GaAsPNsemiconductorsarepromisingmaterialmostofthemicrotwinsandabi-steppedSibuffercanbeforthedevelopmentofhigh-efficiencytandemsolarcellsgrown,suitabletoreducetheanti-phasedomai
3、nsdensity.onsiliconsubstrates.GaAsPNdiluted-nitridealloyisstu-Wealsoreviewourrecentprogressinmaterialsdevelop-diedasthetop-junctionmaterialduetoitsperfectlatticementoftheGaAsPNalloyandourrecentstudiesofallthematchingwiththeSisubstrateanditsidealbandgapdifferentbuildingblockstowardthedevelo
4、pmentofaPINenergyallowingaperfectcurrentmatchingwiththeSisolarcell.GaAsPNalloywithenergybandgaparoundbottomcell.TheGaP/Siinterfaceisalsostudiedinorder1.8eV,latticematchedwiththeSisubstrate,hasbeentoobtaindefect-freeGaP/Sipseudo-substratessuitableforachieved.Thisalloydisplaysefficientphotol
5、uminescencethesubsequentGaAsPNtopjunctionsgrowth.Resultatroomtemperatureandgoodlightabsorption.Anearly-showsthatadouble-stepgrowthproceduresuppressesstageGaAsPNPINsolarcellprototypehasbeengrownonaGaP(001)substrate.Theexternalquantumefficiencyand*Correspondingauthor:O.Durand,UMRFOTON,CNRS,I
6、NSAdetheI–VcurveshowthatcarriershavebeenextractedfromRennes,F-35708Rennes,France,E-mail:theGaAsPNalloyabsorber,withanopen-circuitvoltageolivier.durand@insa-rennes.frabove1eV,howeveralowshort-circuitcurrentdensityS.Almosni:E-mail:samy.almosni1@insa-rennes.fr,Y.PingWang:E-mail:Yanping.Wang@i
7、nsa-rennes.fr,C.Cornet:E-mail:obtainedsuggeststhatGaAsPNstructuralpropertiesneedCharles.Cornet@insa-rennes.fr,A.Létoublon:E-mail:furtheroptimization.ConsideringallthepathwaysforAntoine.Letoublon@insa-rennes.fr,UMRFOTON,CNRS,INSAdeimprovement,the2.25%efficiency
