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1、SPIE2004#5376-115CharacterizationofanUltra-ThickPositivePhotoresistforElectroplatingApplicationsBradK.Avrit,EdW.Maxwell,LisaM.HuynhTriQuintSemiconductorHillsboro,Or97124ElliottCapsutoShin-EtsuMicroSi,Inc.Phoenix,AZ85044Theperformancerequirementsforultra-thickphotoresistsarer
2、apidlyincreasingwiththedramaticgrowthinnewlithographicapplicationsthatrequireelectroplatingprocesses.Twoofthemainapplicationsforultra-thickphotoresistsarenanotechnology(MEMS)andadvancedpackaging.Flipchippackaginghasbecomewidelyadoptedtoaddresselectricaldeviceperformanceandch
3、ipformfactorconsiderations.Thegrowthinthenanotechnologymarketisdrivenbyawiderangeofproducts,whichincludeaccelerometers,inkjetprintheads,biomedicalsensorsandopticalswitches.Electroplatinglevelsfortheseapplicationsrequireaphotosensitivepolymermaterialcapableofcoating,exposinga
4、ndplatingwithconventionalsemiconductorequipmentandstandardancillaryprocesschemicals.Asinglecoatsteptoachievethefinalphotoresistthicknessiscriticaltominimizethenumberofprocessstepsandcycletime.Forthisthicklayerthesidewallprofile,aspectratio,electroplatingdurabilityandsubseque
5、ntstripabilityareallimportant.Thisstudycharacterizedanovelpositive®photoresist(Shin-EtsuSIPR)foruseina100micronthickcoatforelectroplatingoncopper.Thelithographicperformanceoftheultra-thickpositivephotoresistwasoptimizedusingabroadband,1XKARLSUSSMA150alignerusedintheproximity
6、mode.Allproximitygapswerehardsetat100microns.CrosssectionalSEManalysis,processlinearity,andoptimizedproximitygapswereusedtoestablishthelithographiccapabilities.Highaspectratiostructureswerethenelectroplatedusingtheoptimizedphotoresistprocesstodemonstratephotoresistdurability
7、andstripability.Arecommendedprocessflowisdescribedforthisphotoresistandexposuretool.KeyWords:advancedpackaging,MEMS,thickresist,electroplating,processoptimization,Cubump,singlecoat100micronresistfilm1.0INTRODUCTIONRecentlytherehasbeenarapidaccelerationinthepaceofconversionfr
8、omconventionalceramicandplasticbasedintegratedcircuit(IC)packagingtoadvance
