英飞凌第4代IGBT介绍

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1、IGBT4ModulesoptimizedforEV/HEVDriveApplicationsSep.2010PowerSeminarCompactdesign/Highpowerdensity
Overloadcoefficientisaround:2–2.5lasting1mins–3minsAlreadythermalstableforIGBTmoduleRecommendtodostablethermalcalculatebasedonpeakpower.Loadprofilesimulationisevenbetter
Max.liquidtemperatureisup

2、to75degreeorevenhigherMuchharshthanindustryapplicationBettercoolingAll600/650Vchipand1200VE4,P4chipreachHighermax.Tj150degreemax.operatingtemperatureChiplossesreductionTrenchfieldstoptechnologyCopyright©InfineonTechnologies2010.Allrightsreserved.1200Vlevelchips
Twokindschipsarerecommendedtobeu

3、sedIGBT4-HighPowerP4chip¬Alittlebithigherswitchinglosses¬MuchsofterswitchingperformancelowerEMCproblemIGBT4-MediumPowerE4chip¬Lowerswitchinglossesforhighfrequency28001400240012002000100016008001200600IC[A]UDC[V]800IC_HE4400IC_HP4UDC_HE4400200UDC_HP40000,511,522,533,54-400-200Copyright©Infine

4、onTechnologies2010.Allrightsrt[µs]eserved.600Vlevelchips
TwokindsofchipE3(600V)¬LowerswitchinglossesforhighfrequencyE4(650V)¬Alittlebithigherswitchinglosses¬MuchsofterswitchingperformanceNew¬50VmorevoltagemarginVCEmax=559VVCEmax=428VE3chipE4chipTurnoffpeakvoltagemarginincrease(559-428)+50=1Co

5、pyright©InfineonTechnologies2010.Allrightsreserved.81VIGBTvoltageclasseschoosing
576Vbatteryvoltagesystem1200VIGBT
312V/336Vbatteryvoltagesystem600Vor1200V?MaximumpeakDCvoltageisaround420VBigchallengetominimizebusstrayinductanceVg∆Vdi/dt∆V=Ls*di/dtModuleinternalstrayinductanceCopyright©Inf

6、ineonTechnologies2010.Allrightsreserved.650VchipVs.1200Vchip@lossesTypical100kWpowerDClinkvoltageV336OutputcurrentAmps300650VE41200VE4OutputfrequencyV400Vcesat1.7V2.1VModulationFrequencykHz16Eon4mJ61mJModulationfactor0.8Eoff35mJ73mJPowerFactor0.8600A,650V600A,1200VE4chipE4chip(W)(W)35%lowerloss

7、es,means1.2%IGBTstaticlosses127158efficiencyimprovementIGBTdynamiclosses169270Diodestaticlosses4247Diodedynamiclosses46111Copyright©InfineonTechnologies2010.AllrightsrTotallosseseserved.384586Reliability-Vibration
Vibrationtestreq