石墨烯的电阻跟温度的关系

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1、TEMPERATUREDEPENDENTRESISTANCEOFGRAPHENEOXIDEAntoinetteRobustelliGraphene&GrapheneOxide•Graphene-twodimensionalsheetsofgraphitewithathicknessof5-10nm.•GrapheneOxide–monolayerflakesfromasinglesheetofgraphenewithathicknessof.7-1.2nm.TemperatureDependentResistance•Becausegrapheneconductselectricityquic

2、kly,itisusedasasemi-conductor.•Usingsilverelectrodes,wewilltestthepropertiesofgraphene.Temperaturedependentresistanceisthebasisofourproject.•Anincreaseintemperaturemayreduceresistanceonelectrodedesignscreated.CreatingSamples•UsingAutoCAD,designscanbemade.Theelectrodedesignstobetestedaremadewithlayer

3、sofgrapheneoxideandsilver.•ADimatixprinterisusedtocreatethedesignsonasubstrate.ReductionProcess•Thereductionofgrapheneoxideisnecessaryinthisproject.•Thisprocessremovesfunctionaloxideandhydroxidegroupsfromthegrapheneoxide.•Thiswillresultinasubstancemoresimilartographeneinregardstoitsphysicalandelectr

4、icalproperties.ReductionProcess•Inthislabwewilluseareductionmethod,thermalannealing.•Thermalannealing-inthis,wewillbeleavingsamplesonahotplatefor8-12hoursatatime.TestingResistance•UsingtheKeithly2000,andathermocouple,resistancecanbemeasuredinKilo-Ohm's.•Intestingthedesigns,resistancemayvarydepending

5、onthethicknessofthegrapheneoxideprintedonthesubstrate,andthetemperatureinwhichitistested.TestingResistance•Resistancemaydecreaseasthetemperatureincreases.•Thicknessofthegrapheneoxidemayvaryitsresistance.OneLayerofrGOTwoLayersofrGOThreeLayersofrGOFourLayersofrGOFiveLayersofrGOSixLayersofrGOResults•In

6、testingeachsampleofthegrapheneoxide,thetemperaturedependentbaseresistancevaried.•Resistancedecreasedwithanincreaseintemperature.•Lineardataresultsfromthetestingofeachsample,excludingthe2layersample.Thissamplemightnothavebeenproperlyreduced,whichtendstohappenintestinggrapheneoxide.•Anincreaseinthethi

7、cknessofasampleofgrapheneoxidedecreasesitselectronmobilityatagradualpace.