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1、6thInternationalConferenceonElectricalandComputerEngineeringICECE2010,18-20December2010,Dhaka,Bangladesh3DTemperatureDistributionofSiCMESFETUsingGreen’sFunctionM.S.IslamandMd.RakibulKarimAkandaDepartmentofElectricalandElectronicEngineeringBangladeshUniversityofEngineeringand
2、TechnologyDhaka-1000,BangladeshCorrespondingauthor:islams@eee.buet.ac.bdAbstract—Athree-dimensional(3D)analyticalmodelisderivedinthispapertopredictthetemperaturedistributioninsiliconcarbide(SiC)MESFET.TheanalyticalresultsarealmostsimilartothesimulationresultsobtainedbyAtlas.
3、Themodeldescribestheinfluenceofthestructuralparameterandinputpowerontemperaturedistribution.Insomepreviouspapers,analyticalsolutionwasobtainedbythecustomaryvariable-separationmethodwherealongcalculationisneeded.ButbyusingGreen’sfunction,wegetamodelthatismanytimesfasterandevenh
4、andcalculationispossible.TheresultscanbeusedforoptimizationofthethermaldesignofSiCMESFET.IndexTerms—SiCMESFET,Green’sfunction,Atlas,variable-separationmethodI.INTRODUCTIONFig.1.CrosssectionofSiCMESFET(sideview)ThepredictionofthepeakandaveragetemperatureinSiCMESFETs(Fig.1),esp
5、eciallyinpowercircuits,hasbecomeveryessential.Peaktemperaturehasagreatinfluenceonthereliabilityandlifetimeofthecircuit.Againaveragetemperatureaffectsthemicrowaveandsteadystateelectricalbehaviour.RecentlySiCMESFETshavebeenconsideredtobeanexcellentcandidatesforhigh-power,high-fr
6、equencyandhigh-temperatureapplicationsincommercialandmilitarycommunicationsduetotheirsuperiorproperties,therelativelymaturematerialgrowthanddevicefabricationtechnology[1]-[3].AccordingttheaccuratechanneltemperaturesofMES-FETsunderthenormaloperatingcondition,theirlifetimescanb
7、eestimatedandsafeoperationareascanbedetermined.Althoughperformancesareverypromising,SiCMESFETsmaysufferfromself-heatingeffectswhichimposesalimita-tionontheoutputpower[4].ForlargeperipheryMESFETs,Fig.2.Mobilityversustemperaturecurveself-heatingresultsinahigherlatticetemperatur
8、einthetransistorchannelwhichcandeterioratethecurrentvoltagechannelte
