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1、纳米材料与结构Nanomaterial&Structure碳纳米管薄膜的场发射及其有效发射面积1,3221董建会,曾葆青,田时开,崔文丽(1.中北大学理学院物理系,太原030051;2.电子科技大学物理电子学院,成都610054;3.中国科学院山西煤炭化学研究所,太原030001)摘要:讨论了薄膜与阳极间隔以及有效发射面积对碳纳米管薄膜场发射性能的影响。以磁控溅射Al和Ni在Si片上做为缓冲层和催化剂,以乙炔为C源气体,利用化学气相沉积法制备了碳纳米管薄膜。扫描电镜观测结果表明,碳纳米管的直径为50～80nm。采用二极管结构,测试了样品的场发射性能,结果表明碳纳米管薄膜具有优异的场发射
2、特性,薄膜与阳极距离为400μm时开启场为0185V/μm、阈值场为1122V/μm。F2N理论计算结果表明,碳纳米管薄膜的有效发射面积几乎不随场发射所加电压的变化而改变;有效发射面积随着薄膜与阳极距离的增加而增大。关键词:场发射;F2N理论;有效发射面积;碳纳米管;磁控溅射中图分类号:TN383;O46214文献标识码:A文章编号:1671-4776(2009)10-0599-05FieldEmissionCharacteristicsandEffectiveEmissionAreaofCarbonNanotubeFilms1,3221DongJianhui,ZengBaoqing,
3、TianShikai,CuiWenli(1.DepartmentofPhysics,SchoolofScience,NorthUniversityofChina,Taiyuan030051,China;2.SchoolofPhysicalElectronics,UniversityofElectronicScienceandTechnologyofChina,Chengdu610054,China;3.InstituteofCoalChemistry,CAS,Taiyuan030001,China)Abstract:Effectsofthesample2anodedistance(th
4、eintervalbetweensampleandanode)andeffectiveemissionareaonthefieldemissioncharacteristicsofcarbonnanotubefilmswerediscussed.SisubstratewascoatedwithAlandNifilmsasthebufferlayerandcatalyzerinsequencebyamagneticsputteringmethod,andcarbonnanotubefilmsweregrownonSisub2stratebythermalchemicalvapordepo
5、sitionwithacetyleneastheprecursors.TheSEMwasusedtodeterminethestructureofthefilms.Theresultsshowthatthediametersofcarbonnanotubesare50-80nm.ThefieldemissionpropertiesweretestedontheCNT2anodesetup,andthemesurementresultsindicatesthatthelowturn2onfieldis0185V/μmandthresholdfieldis1122V/μmatthesamp
6、le2anodedistanceof400μm.EffectiveemissionareawasextractedfromtheF2Nplotsatdif2ferentsample2anodedistances,whichshowstheareaincreaseswithsample2anodedistanceincreasing.TheemissionareawasestimatedalsofromtheF2Nequation,whichindicatesthattheemissionareaslightlychangeswithelectricfield,regardlessoft
7、hesampleconditions.Keywords:fieldemission;Fowler2Nordheimtheory;effectiveemissionarea;carbonnanotube(CNT);magneticsputteringDOI:10.3969/j.issn.1671-4776.2009.10.005EEACC:0587收稿日期:2009-05-07E2mail:dongjianhui@nuc.edu.cn2009年1
