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1、23`5_B!Vol.23,No.52008G9'JournalofInorganicMaterialsSep.,20089Rx:1000-324X(2008)05-0928-053C-SiC/Si(111)(*X*=F*Boxnoljtrmurwqvpks(i℄ag_eZg℄`fYbhd^[230029)*X"1000r+!X5lHU(SSMBE)D*SiX!T3C-SiC{:RHEED=$2*Si(111)_!TSiC:3C-SiC,5Xz3%iEx>:%X+X(GID)D5
2、=o[X+X(XRD)RSiC:C},loR[X3x+:d },ef3C-SiC:lSiXF&lU3&6 },yZ:x5"%XPhi3ax+=*&:oR*!{SiC/SiA0v~,h56SiC:U )Zi!{A0`.&yGIDlXRDax+=/5:U/loq=x/5SiC:*0CF(jF03X+X%X℄hv℄X5lHUV5O484,TN3049<{.A3C-SiC/Si(111)byX-rayGrazingIncidentDiffractio
3、nLIUZhong-Liang,LIUJin-Feng,RENPeng,LIRui-Peng,XUPeng-Shou,PANGuo-Qiang(NationalSynchrotronRadiationLaboratory,UniversityofScienceandTechnologyofChina,Hefei,230029,China)Abstract:Monocrystalline3C-SiCfilmsweresuccessfullygrownonSi(111)substrateatsubstratetemperatureof1000◦Cbymolecularbe
4、amepitaxy(MBE)usingsolid-stateelementCandSisources.TheRHEEDresultsindicatethatthefilmgrownonSi(111)substrateis3C-SiCfilmwithallcubicaxesparallelthesubstrates.ThequalityandthestrainofthefilmwereinvestigatedbySynchrotronradiationX-raygrazingincidentdiffractionmethod(GID)combiningX-raydiffract
5、ion(XRD).Theresultshowsthatthefilmisinthestateofbiaxialtensilestrain.ThebiaxialtensilestrainisattributedtothelargelatticeandthermalexpansioncoefficientmismatchbetweenSiCandSi.Accordingtotheresultoftherockingcurvesofthefilmatdifferentgrazingincidentangles,qualityofthefilmisbetterinthezonefarf
6、romtheinterfacebetweenSiCandSiduetothedecreaseofthedefectsinthezonefarfromtheinterface.TheresultsofrockingcurvesofGIDandXRDshowthatthetiltmosaicisbiggerthanthetwistmosaicintheSiCfilm,whichindicatesthatthelatticearrayinplaneisinbetterorderthanthatinperpendiculardirection.Keywords:XRD;GID
7、;Si;SiC;SSMBE1DÆST&y&A+ÆZ;)iw^E
8、!G_DSÆiw^
9、FHmAÆiw^+DWyR#?Df;Æpy1Ys0+jk+^Y#U[1−3],md,11Æ℄y~j'SiCp/'%Æ2007–10–15,/ '%Æ2007–12–10?#Æ`ogD(50572100)XSÆX(1979–),84RS"E-mail:lzl2004@mail.ustc.edu.cn3A:&ÆGS?RSE-mail:psxu@ustc.edu.cn5_W3C-SiC/Si