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1、HM830/HM830F500VN-ChannelMOSFETGeneralDescriptionFeaturesThisPowerMOSFETisproducedusingSLsemi‘s•5.0A,500V,RDS(on)=1.50Ω@VGS=10VadvancedplanarstripeDMOStechnology.•Lowgatecharge(typical20nC)Thisadvancedtechnologyhasbeenespeciallytailoredto•Fastswitchingminimizeon-stateresistance,providesu
2、periorswitching•100%avalanchetestedperformance,andwithstandhighenergypulseinthe•Improveddv/dtcapabilityavalancheandcommutationmode.Thesedevicesarewellsuitedforhighefficiencyswitchedmodepowersupplies,activepowerfactorcorrectionbasedonhalfbridgetopology.Dô●◀▲ôG●●TO-220TO-220FGDSGDSôSAbsolu
3、teMaximumRatingsTC=25°CunlessotherwisenotedSymbolParameterHM830HM830FUnitsVDSSDrain-SourceVoltage500VIDDrainCurrent-Continuous(TC=25°C)5.05.0*A-Continuous(TC=100°C)3.03.0*AIDMDrainCurrent-Pulsed(Note1)2020*AVGSSGate-SourceVoltage±30VEASSinglePulsedAvalancheEnergy(Note2)305mJEARRepetitive
4、AvalancheEnergy(Note1)7.6mJdv/dtPeakDiodeRecoverydv/dt(Note3)4.5V/nsPDPowerDissipation(TC=25°C)7640W-Derateabove25°C0.60.32W/°CTJ,TSTGOperatingandStorageTemperatureRange-55to+150°CMaximumleadtemperatureforsolderingpurposes,TL300°C1/8"fromcasefor5seconds*Draincurrentlimitedbymaximumjuncti
5、ontemperature.ThermalCharacteristicsSymbolParameterHM830HM830FUnitsRθJCThermalResistance,Junction-to-Case1.23.65°C/WRθCSThermalResistance,Case-to-SinkTyp.0.5--°C/WRθJAThermalResistance,Junction-to-Ambient62.562.5°C/WShenzhenH&MSemiconductorCo.Ltdhttp：//www.hmsemi.comHM830/HM830FElectrica
6、lCharacteristicsTC=25°CunlessotherwisenotedSymbolParameterTestConditionsMinTypMaxUnitsOffCharacteristicsBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=250µA500----V∆BVDSSBreakdownVoltageTemperatureID=250µA,Referencedto25°C--0.6--V/°C/∆TJCoefficientIDSSVDS=500V,VGS=0V----1µAZeroGateVoltageDra
7、inCurrentVDS=400V,TC=125°C----10µAIGSSFGate-BodyLeakageCurrent,ForwardVGS=30V,VDS=0V----100nAIGSSRGate-BodyLeakageCurrent,ReverseVGS=-30V,VDS=0V-----100nAOnCharacteristicsVGS(th)GateThresholdVoltageVDS=VGS,ID=250µA2.0--4.0VRDS(on)StaticDrain-SourceVGS=10V,ID=2.5A--1.101.5
