第四讲 同步辐射应用

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1、Chap.8.SRprocesses8.1PhotochemicaleffectsofUV,VUVandSXA.PhotodissociationAB+hν→A+B(ex.)W(CO)+hν→W+6CO6B.MovementofatomsinsolidsDefectformation,desorption,etchingSurfacecrystallizationofamorphousmaterialsC.Surface-etchingphotochemicalreactionwithgases(ex.)Si+2Cl+hν→SiCl(vaporiz

2、e)24D.SynthesisofnewmaterialsC+D+hν→CDPhotopolymerization,(ex.)styrene+hν→polystyrenePhotochemicalvapordepositionZn(CH)+Te(CH)+hν→ZnTe+・・・・・・・25225[cf.]Biologicalphotochemical-effectsofUVlight:sunburn,snowblindness,sterilizationH+desorptionyieldandtotalelectronyieldspectraofH-

3、passivatedSi(111)surfaceY.Takakuwaetal.,Jpn.J.Appl.Phys.36(1997)7699Photochemicalvapordeposition-FabricationofWfilmonSiwafer-W(CO)+hν→W+6CO6R.Zanonietal.,SolidstateCommun.76(1990)1239.PhotopolymerizationofstyreneStyrene+hν→Polystyrene

4、ationapparatus>100μmK.Yamadaetal.CH=CH2Styrene:liquidinatmosphereStyrene(CH):88gasinvacuumSRfabricationofquantumdotTMIn:TrimethylindiumTBP:TertiarybutylphosphineEmissionenergy:0.8eV(1.5μm)Bandwidth:0.1～0.15eVT.Urisuetal.8.2Micromachine(LIGA)SRMaskresistMetalsubstrateGear(Saile

5、,ANKA）ElectrolyticplatingNickelChap.9.X-rayDiffraction§9.1ElasticscatteringincrystalBraggreflectioncondition:nλ=2dsinθˆkk),q=2ksinˆ=4πsinˆScatteringvector:q=k1－k2(==kθθ12λ9.1.1Diffractionintensityiq・rjriq・rDiffractionmatrixelementisproportionaltoe=ρ()edv=ρ,∑∫qjwhereρ(r)represe

6、ntselectronnumberdensityincrystal.Sinceunitcellsalignperiodicallyincrystal,ρ(r)isinvariantagainsttranslationalsymmetry,T=pa+qb+rc(ｐ,q,r：integer)***andq=－G,whereG=ha＋kb＋lc(reciprocallattice(h,k,l：integer)).∗1b×c∗1c×a∗1a×bHerea=,b=,c=,2πa・()b×c2πb・()c×a2πc・()a×bwherea,b,careprim

7、itivevectorsofunitcell.2=∑∫−iG・(pa+qb+rc+r)=∑()()Diffractionintensity∝ρ,ρρ(r)edvLhklFG,GGunitp,,q,rp,qrwhererrepresentspositioninunitcellinwhichoriginofcoordinateisoneofcornersofunitcell.2()sin2(NGb2/)2()2sinNxGxa2/yysinNzGzc2/L()hkl=．．,(L:Lauefunction)2()2()2()sinGa2/sinGb2/s

8、inGc2/xyzwhereNa,NbandNcarenumberofatomsina,bandcdirections,r