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ID:37365071
大小:5.04 MB
页数:57页
时间:2019-05-22
《高性能碳化硅陶瓷材料制备技术研究》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、南京理工大学硕士学位论文高性能碳化硅陶瓷材料制备技术研究姓名:常永威申请学位级别:硕士专业:材料学指导教师:崔崇;燕东明20090101ABSTRACTInrecentyears,siliconcarbidecer锄icshowsitsuniqueadValltagesand掣aduallybeginst0anractmepeoplea位entionaScomponentssuitablefor11ightempera_turestructuralmaterialsi11t11eharshenVirom
2、em,such邪11i曲temperanlre·resistaIlce,heatimpact—resistaIlce,cormpt-resistarlce.Bypressurelesss血e血g,notomycomplex-shape舡ldlarge-dirnensionpartsofsiliconc“bidecanbeprepared,butalsoindus仃ializedproductionforsiliconcarbideproductscanbecompleted.Bec乱lSeoflow·c
3、ostadVantage,pressurelesssinterillgbecomesonekeytecllllology证courseofpraucticalproduction.Pressurelesssmte血gi11cludessolidp11£峪esmring趾d1i叫dpb郎esint嘶ng,砌chwerebotllstudiedinthethesis,butthesolidph弱esirlte血gwaSresearched访detail.Hi咖q叫i够siliconcarbidepowder
4、w鹊gottentllrougllul衄-f-metreatment,picklil唱,pudficationtechllologyandSpraymggranulatiIlg.At也es锄etime,lli曲perfomaIlceprodllcthaSbeenreceiVedbyoptirIliziI培cornposition龇1ds血eringtechlliqIles.Theresearchcontentsandresultsare‰dllced嬲mef01low证g:Thesuper-f.metr
5、eatmentofSiCpo、Vderw嬲carriedoutbynuidizedbedopposedjetmill,andme:resultsshowedthat也ee虢ctsofsuper.f-me仃ea衄ent沁reaSed、析tllmeincreaLseofsorter丘equencyaIldcms址ngpressure.Abe讹rgrirldiIlge毹ctⅥ协acbjeVedbyusingaMghersorter行equency(40HZ),alⅡ曲ercms址唱pressure(0.7MP
6、a)aIldfew血llingtirlles(1).IntheseconditioIlS,thecompactshadrelatiVelyhi曲density锄dmicr0stnJcturalhomogenei吼TheexperimentalresultSshowthatsimeringtemperatureofmecompactdecreaseda11dthesu—’acemicrostructure,densificationandmechanicalpropertiesofthesinteredb
7、odycanbeamelioratedobViouslybysuper-flnetl℃atment.ThepllrificationtreatmentofSiCpowderwaLscompIetedbythemethodmixedacid.Thep血ficationmemod、Vasperfectundert11econditionswitlIp∞ponionl:‘16fpickh唱S0lution(HF:HN03),O.1mo儿ofconcentrationaIld2hofpicl(1ingtiIll
8、e.IIltlleconditio珥wegothigh—finesiliconcarbidepowder.ThesprayinggranulatmgofSiCpowderwasfiIlishedbypressu_respmyingd巧ingequipment,wMchcanimproVemenuXionofSiCpowder.Comparedwithnospraying,tlle100sedens时oftheSiCgrallularpo、v
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