Physics-Based_Model_SiC_JFET_USC_2009

Physics-Based_Model_SiC_JFET_USC_2009

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时间:2019-05-20

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1、APhysics-BasedModelforaSiCJFETAccountingforElectric-Field-DependentMobilityE.Platania§,Z.Chen,F.Chimento§,A.Grekov,R.Fu,L.Lu,A.Raciti§,J.Hudgins*,A.Mantooth†,D.Sheridan‡,J.Casady‡,E.SantiUniversityofSouthCarolina,DIEES-ARIELUniversityofCatania§,UniversityofNebraska*,UniversityofArkansas†,SemiSouthL

2、aboratories,Inc.‡Abstract—InthisworkaphysicalmodelforaSiCJunctionField·a~2Xhighersaturationvelocity.EffectTransistor(JFET)ispresented.ThenovelfeatureofthemodelisthatthemobilitydependenceonbothtemperatureandAhighbreakdownelectricfieldallowsthedesignofSiCelectricfieldistakenintoaccount.Thisisparticul

3、arlyimportantpowerdeviceswiththinnerandhigher-dopedvoltage-blockingforhigh-currentpowerdevices,wherethemaximumconductionregionsand,asaconsequence,aloweron-stateresistanceforacurrentislimitedbydriftvelocitysaturationinthechannel.Thegivenbreakdownvoltageisachievable.Thelargebandgapofmodelequationsare

4、describedindetail,emphasizingtheSiCresultsinlowerleakagecurrentsthansilicon,inamuchdifferencesintroducedbythefield-dependentmobilitymodel.higheroperatingtemperatureandhigherradiationhardness.ThemodelisthenimplementedinPspice.BothstaticandThehighthermalconductivityallowsdissipatedheattobedynamicsimu

5、lationresultsaregiven.Theresultsarevalidatedmorequicklyextractedfromthedeviceavoidingtheneedtowithexperimentalresultsunderstaticconditionsandunderhavebulkyandexpensivecoolingsystemsinmostresistiveandinductiveswitchingconditions.applications.This,inturn,translatesintohighcostsavingsinmasscriticalapp

6、lications.Finally,thesaturatedelectronKeywords-SiliconCarbide,JFET,physicsbasedmodel,field-velocityofSiC,whichdeterminesthemaximumcurrentdependentmobility.densityofthedevice,istwicethatofSilicon.I.INTRODUCTIONAlthoughSiCpresentsallofthesebenefits,itscommercialSiliconcarbide(SiC)wasconsideredmorepro

7、misingthanimpacthasbeenseverelylimitedbythefollowingfactors[1]:silicon(Si)duringtheearlydaysofsemiconductortechnology·lackofavailabilityofhighqualitySiCwafersand[1-3].Butbythe1960s,theCzochralskitechniquefo

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