非晶Co-Si-Zr薄膜晶化和相变行为

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1、上海交通大学硕士学位论文摘要非晶Co-Si-Zr薄膜晶化和相变行为摘要近年来金属硅化物在VLSI工艺中获得广泛应用其中CoSi2薄膜由于具有优良的性能较低的电阻率15~20cm与Si片结合错配度小仅为1.2良好的热稳定性尤其受到关注本文利用X射线衍射仪XRD差示扫描量热仪DSC结合俄歇电子能谱AES和原子力显微镜AFM分析了非晶Co-Si薄膜的晶化和相变过程以及Zr作为添加元素对晶化和相变过程的影响结果表明Co-Si-Zr溅射非晶薄膜热处理时同时析出CoSiCoSi2晶化相与Co-Si溅射薄膜不同至特定温度CoSi相逐渐向CoSi2相转变晶化初始相取决于系统的有效形成热

2、和非晶薄膜的短程结构因素掺杂Zr元素提高了形核势垒增大了晶化激活能抑制了晶化相的形核和长大使非晶Co-Si-Zr薄膜起始晶化温度比Co-Si薄膜有所提高然而温度超过750时随着Zr的阻碍作用的减弱和ZrSi2的形成加速了晶化相CoSi向CoSi2的转变中间层Zr对Co-Si薄膜晶化和相变过程有着与掺杂Zr相似的影响影响程度的差异是因为Co-Si薄膜中的Zr含量不同Co-Si-Zr薄膜经高温热处理后表面平整Zr作为中间层则起了扩散阻碍层的作用延迟了Co向Si基底的扩散迁移有利于得到平整的CoSi2/基底Si界面掺杂Zr的Co-Si薄膜在具有较小电阻率的同时还拥有良好的热稳

3、定性关键词Co-Si薄膜Zr晶化相变热稳定性电阻率1上海交通大学硕士学位论文摘要STUDYOFTHECRYSTALLIZATIONANDPHASETRANSFORMATIONOFAMORPHOUSCo-Si-ZrTHINFILMSABSTRACTMetalsilicideshave,inrecentyears,beenwidelyusedinVLSItechniques.CoSi2isofparticularinterestbecauseofitslowelectricalresistivity(15~20cm),smalllatticemismatchof1.2%wi

4、ththesiliconsubstrateandgoodthermalstability.ThecrystallizationandphasetransformationofamorphousCo-Sithinfilms,aswellastheinfluenceofzirconiumonthecrystallizationandphasetransformationwereinvestigatedbyX-raydiffraction,differentialscanningcalorimeter,AugerelectronemissionspectrometryandA

5、tomforcemicroscope.Theresultshowedthat:WhensputteredamorphousCo-Si-Zrfilmsareheated,CoSiphaseandCoSi2phaseformsimultaneously,whichisdifferentfromsputteredamorphousCo-Sifilms.TheconversionofCoSiintoCoSi2willbeginatacertaintemperature.Thefirstphasethatformsfromtheamorphousfilmsisdecidedbyt

6、heeffectiveheatofformationofthesystemandtheshort-rangestructureofamorphousfilms.ThedopedZrintoamorphousCo-Sifilmsincreasesthecrystallizationnucleationbarrierandthecrystallizationactivationenergy,therebyinhibitsthenucleationandgrowthofthecrystallizationphase,resultinginthehighercrystalliz

7、ationtemperature.However,whentheannealingtemperatureishigherthan750,thetransformationfromCoSitoCoSi2isacceleratedwiththeweakeningofZr’sobstructiveeffectsandtheformationofZrSi2phase.TheinfluenceofZrinterlayeronthecrystallizationandphasetransformationissimilarwiththatofthed