电磁环境中电子器件的失效分析

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1、第32卷第2期电子器件Vo1．32No．22009年4月ChineseJournalOfElectronDevicesApr．2009FailureAnalysisofElectronDeviceunderElectromagneticEnvironmentZHANGFang，CAIJin—yanH，ZHUYah—hui，1．DepartmentofOpticsandElectronicsOrdnanceEngineeringCollege，Shijiazhuang050003，China；、2．TheMilitaryRepr

2、esentativeSectionStayedin5413Factory，Shijiazhuang050003，China，Abstract：MOSFETfailuremodelingistakenasanexampleforthiselectrondeviceismoreandmoreimpor—tant．AimingatthefailurecharacteristicofMOSFETexposedtoimpactofelectromagneticpulseandthecharacteristicunderperiodpul

3、se，aconclusionthatthisconformstodegradationfailuremodelbasedonstochasticprocessiSobtained．Accordingtothisconclusionandcharacteristicoftwokindsofelectricstres—ses，modelingbasedonstochasticprocessanddynamicstress—strengthinterferencemodelingareputfor—wardandpresentedr

4、espectively．Theexperimentalschemeofelectrondevicefailureismadethroughestab—lishmentandanalysisofmode1．Keywords：degradationfailure；gateoxidesoftbreakdown；stochasticprocessmodel；dynamicstress-strengthinterferencemodel；electromagneticpulsestressEEACC：5100；2570D电磁环境中电子器

5、件的失效分析*张芳，蔡金燕H，朱艳辉(1．军械工程学院光学与电子工程系，石家庄050003；2．驻5413厂军代室，石家庄050031)摘要：以现在应用较广泛的电子器件一MOS器件在电磁环境中的失效建模为例，针对MOS器件受到电磁脉冲和周期脉冲的冲击后，所表现出来的失效特征，得出它符合基于随机过程的退化失效模型所描述的结论。根据结论和两种电应力的特点，分别提出基于随机过程的失效建模和动态应力一强度干涉建模。通过模型的建立和分析，初步制定出电子器件失效的试验方案。关键词：退化失效；栅氧化层软击穿；随机过程模型；动态应力一强度干涉

6、模型；电磁脉冲应力中图分类号：1’B1l4．3文献标识码：A文章编号：1005—949O(2OO9)O2．o368-Il4Americanarmydefineselectromagneticenvi-naturalelectromagneticphenomenaeffectsuchasronmentas：“thepowerandtimedistributionstatelighting，atmospherics”．AmericanDefenseMinis-ofelectromagneticradiationorconductr

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