碳化硅中子探测器静态特性测试方法及中子探测性能研究

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1、分类号TL816学号14030051ＵＤＣ密级公开工学硕士学位论文碳化硅中子探测器静态特性测试方法及中子探测性能研究硕士生姓名季利锋学科专业仪器科学与技术研究方向传感器与战场环境监测指导教师刘国福副教授国防科学技术大学研究生院二〇一六年十一月StaticCharacteristicTestandNeutronDetectionPerformanceofSiCNeutronDetectorCandidate：JiLifengAdvisor：AssociateProf.LiuGuofuAdissertationSub

2、mittedinpartialfulfillmentoftherequirementsforthedegreeofMasterofEngineeringinInstrumentScienceandTechnologyGraduateSchoolofNationalUniversityofDefenseTechnologyChangsha，Hunan，P.R.China(November，2016)国防科学技术大学研究生院硕士学位论文目录摘要.....................................

3、.............................................................................iABSTRACT.........................................................................................................ii第一章绪论.............................................................

4、.........................................11.1研究背景及意义............................................................................................11.2国内外研究现状............................................................................................41.2.1国外研究现状

5、.....................................................................................51.2.2国内研究现状.....................................................................................61.3本文主要研究工作和内容安排............................................................

6、.........71.3.1本文主要研究内容..............................................................................71.3.2文章结构.............................................................................................7第二章半导体辐射探测器中子探测原理及性能指标................................

7、...........92.1中子探测方法及中子能谱测试方法.............................................................92.1.1中子探测方法.....................................................................................92.1.2中子能谱测量方法.........................................................

8、...................102.2基于碳化硅的辐射探测器设计...................................................................142.2.1PIN结型半导体探测器的工作原理..................................................142.2.2基于S