基于自旋转移矩互补极化磁隧道结的非易失性存储单元研究

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1、分类号TP957学号14060006UDC密级公开工学硕士学位论文基于自旋转移矩互补极化磁隧道结的非易失性存储单元研究硕士生姓名曲连华学科专业微电子学与固体电子学研究方向非易失性存储器研究指导教师赵振宇研究员国防科学技术大学研究生院二〇一六年十二月ResearchofNon-VolatileBitCellBasedonSTTComplementaryPolarizerMagneticTunnelJunctionCandidate:QuLianhuaAdvisor:ProfessorZhaoZhenyuAdisse

2、rtationSubmittedinpartialfulfillmentoftherequirementsforthedegreeofMasterofEngineeringinMicroelectronicsandSolid-StateElectronicsGraduateSchoolofNationalUniversityofDefenseTechnologyChangsha,Hunan,P.R.ChinaDecember13,2016国防科学技术大学研究生院硕士学位论文目录摘要................

3、........................................................................................................iABSTRACT...............................................................................................................iii第一章绪论...........................

4、.................................................................................11.1课题研究背景...........................................................................................11.2课题研究基础...................................................................

5、........................21.2.1核心器件磁隧道结的简介............................................................21.2.2STT-MRAM存储单元的读写机理...............................................31.3研究现状................................................................................

6、...................41.3.1STT-MRAM存储单元研究现状...................................................41.3.2面向STT-MRAM存储单元设计的研究方法..............................101.4本课题主要研究工作...............................................................................101.5论文结构........

7、...........................................................................................12第二章磁隧道结的SPICE建模............................................................................142.1引言....................................................................

8、.......................................142.2磁隧道结电路级建模研究现状...............................................................142.3行为级物理模型.......................................................