《电子器件金半接触》PPT课件

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1、acceptor受主donor施主recombination复合majority多子minority少子transitionregion过渡区depletionregion耗尽区contactbarrier接触势垒p-njunctionpn结heterojunction/异质结EHP电子空穴对homojunction/同质结Schottkybarrier/肖特基势垒barrierheight/势垒高度ideal/理想的workfunction/功函数practical/实际的electronaffinity/电子亲和能Fermilevel/费米能级rectifier/整流器electrosta

2、ticpotential/静电势breakdown/击穿rectifyingcontacts/整流接触Ohmiccontacts/欧姆接触surfacestate/表面态lattice-matched/晶格匹配的tunnelingeffect/隧道效应半导体器件工作的基本方程泊松方程电流密度方程电流连续性方程Manyoftheusefulpropertiesofap-njunctioncanbeachievedbysimplyforminganappropriatemetal-semiconductor(MS)contact.5.7Metal-Semiconductorjunctionsorc

3、ontacts(金属-半导体结、金-半接触）5.7.1SchottkyBarriershttp://en.wikipedia.org/wiki/Walter_H._SchottkyPossibly,inretrospect,Schottky'smostimportantscientificachievementwastodevelop(in1914)thewell-knownclassicalformula,nowwritten-q2/4πε0x,fortheinteractionenergybetweenapointchargeqandaflatmetalsurface,whenthecha

4、rgeisatadistancexfromthesurface.Owingtothemethodofitsderivation,thisinteractioniscalledthe"imagepotentialenergy"(imagePE).Schottkybasedhisworkonearlierworkby(Lord)KelvinrelatingtotheimagePEforasphere.Schottky'simagePEhasbecomeastandardcomponentinsimplemodelsofthebarriertomotion,M(x),experiencedbyane

5、lectrononapproachingametalsurfaceorametal-semiconductorinterfacefromtheinside.1.Schottkyeffect(TheimagePEisusuallycombinedwithtermsrelatingtoanappliedelectricfieldFandtotheheighth(intheabsenceofanyfield)ofthebarrier.Thisleadstothefollowingexpressionforthedependenceofthebarrierenergyondistancex,measu

6、redfromthe"electricalsurface"ofthemetal,intothevacuumorintothesemiconductor:Here,eistheelementarypositivecharge,ε0istheelectricconstantandεristherelativepermittivityofthesecondmedium(=1forvacuum).Inthecaseofametal-semiconductorjunction,thisiscalledaSchottkybarrier;inthecaseofthemetal-vacuuminterface

7、,thisissometimescalledaSchottky-Nordheimbarrier.Inmanycontexts,hhastobetakenequaltothelocalworkfunctionφ.ThisSchottky-Nordheimbarrier(SNbarrier)hasplayedinimportantroleinthetheoriesofthermionicemissio