MOS集成电路的基本制造工艺

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1、半导体集成电路2021/7/23上节课内容要点双极集成电路的基本工艺双极集成电路中元件结构2021/7/23pn+n-epin+P-Sin+-BLCBESP+P+双极集成电路的基本工艺2021/7/23P-SiTepiCBEpn+n-epin+P-SiP+P+Sn+-BLTepiAA’TBL-uptepi-oxxmcxjc四层三结结构的双极晶体管双极集成电路中元件结构2021/7/23ECB2021/7/23相关知识点隐埋层的作用、电隔离的概念、寄生晶体管2021/7/23本节课内容MOS集成电路的工艺P阱CMOS工艺BiCMOS集成电路的工艺N阱CMOS工艺双阱CM

2、OS工艺2021/7/23MOS晶体管的动作MOS晶体管实质上是一种使电流时而流过，时而切断的开关n+n+P型硅基板栅极（金属）绝缘层（SiO2）半导体基板漏极源极N沟MOS晶体管的基本结构源极(S)漏极(D)栅极(G)MOSFET的基本结构2021/7/23siliconsubstratesourcedraingateoxideoxidetopnitridemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegat

3、eoxideMOS晶体管的立体结构2021/7/23在硅衬底上制作MOS晶体管siliconsubstrate2021/7/23siliconsubstrateoxidefieldoxide2021/7/23siliconsubstrateoxidephotoresist2021/7/23ShadowonphotoresistphotoresistExposedareaofphotoresistChromeplatedglassmaskUltravioletLightsiliconsubstrateoxide2021/7/23非感光区域siliconsubstrate

4、感光区域oxidephotoresist2021/7/23Shadowonphotoresistsiliconsubstrateoxidephotoresistphotoresist显影2021/7/23siliconsubstrateoxideoxidesiliconsubstratephotoresist腐蚀2021/7/23siliconsubstrateoxideoxidesiliconsubstratefieldoxide去胶2021/7/23siliconsubstrateoxideoxidegateoxidethinoxidelayer2021/7/23

5、siliconsubstrateoxideoxidepolysilicongateoxide2021/7/23siliconsubstrateoxideoxidegategateultra-thingateoxidepolysilicongate2021/7/23siliconsubstrateoxideoxidegategatephotoresistScanningdirectionofionbeamimplantedionsinactiveregionoftransistorsImplantedionsinphotoresisttoberemovedduringr

6、esiststrip.sourcedrainionbeam2021/7/23siliconsubstrateoxideoxidegategatesourcedraindopedsilicon2021/7/23自对准工艺在有源区上覆盖一层薄氧化层淀积多晶硅，用多晶硅栅极版图刻蚀多晶硅以多晶硅栅极图形为掩膜板，刻蚀氧化膜离子注入2021/7/23siliconsubstratesourcedraingate2021/7/23siliconsubstrategatecontactholesdrainsource2021/7/23siliconsubstrategatecon

7、tactholesdrainsource2021/7/23完整的简单MOS晶体管结构siliconsubstratesourcedraingateoxideoxidetopnitridemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxide2021/7/23CMOSFETP型sisubn+gateoxiden+gateoxideoxidep+p+2021/7/23主要的CMOS工艺V