差分CMOS低噪声放大器的设计

差分CMOS低噪声放大器的设计

ID:36509440

大小:2.20 MB

页数:68页

时间:2019-05-11

差分CMOS低噪声放大器的设计_第1页
差分CMOS低噪声放大器的设计_第2页
差分CMOS低噪声放大器的设计_第3页
差分CMOS低噪声放大器的设计_第4页
差分CMOS低噪声放大器的设计_第5页
资源描述:

《差分CMOS低噪声放大器的设计》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库

1、西南交通大学硕士学位论文差分CMOS低噪声放大器的设计姓名:陈璇申请学位级别:硕士专业:通信与信息系统指导教师:冯全源20080601西南交通大学硕士研究生学位论文第1I页AbstractDuetotherapiddevelopmentinscienceandtechnology,thewirelesscommunicationsystemhaspotentlyshortenedtheconnectivityamongpeople.ThedramaticprogressofCMOSprocesstechnologyhas

2、graduallyevidenceditsapplicationsinRFfront—endcircuits.CMOSprocesspossessestheadvantageoflowcostandhighlyintegration.AsthemainpartoftheRFfront—endreceiver,thefunctionofthelownoiseamplifier(LNA)isamplifyingthefaintsignalwhichinceptedfromairbytheantenna.Itcanreduce

3、thenoisejamming,SOastodemodulaterightinformationforthesystem.ThenoiseperformanceoftheLNAwillaffecttheperformanceofthewholesystemdirectly,andthendecidingthesensitivityanddynamicworkingscopeofthereceiver.Inrecentyears,therapiddevelopmentofwirelessradiosystemlcadsto

4、anincreasingdemandoflOWnoise.10wpower,lowlost,highperformanceandhighintegration.Inordertosatisfytherequirementwedesignedalownoiseamplifier(LNA)for2.5GHzRFfront.endreceiver.Basedon0。18/anCMOSprocessandBSIM3v3modelandadoptedaTow.InputandTow—Outputstructure.a2.5GHzC

5、MOSdifferentiallownoiseamplifierisdeignedforthewirelessreceiverapplication。Thisthesisfirstlyintroducestheprinciple,configurationandadvantageofthedifferentialLNA,andthenanalyzesthecurrent-reusetechnologyanddisadvantagesofthetraditionalstructure,andanimprovedcascod

6、eLNAispresented,whichadoptsacombinationofsource·degeneratedNMOSinvertertoimprovegainandnoisefigure.MeanwhileweproposedaparallelLCnetworkinsteadofthelargevaluegateinductorLg.Fromthedesignstandpoint,iteconomizesthepowerdissipation,reducesthenoisefigureandmakestheop

7、timizationandintegrationofthestageeasy.Fromtheaspectofbiascircuit,noiseoptimization,lineargain,impedancematch,andthedesignmethodologyforLNAisanalyzed,theeffectofthesourceinductive,inputmatchingcapacitanceandthecomponentmodeloftransistorsonLNAiSalsodiscussed.Resul

8、tsbyADSshowthatgainofabove15.053dB,1.41dBNF’theinputreflectionSlliS一50.68dB,thereversetransmittedcoefficientS12of-20.926dBandP1dBof·1.39dBmwithgoodstabilityare

当前文档最多预览五页,下载文档查看全文

此文档下载收益归作者所有

当前文档最多预览五页,下载文档查看全文
温馨提示:
1. 部分包含数学公式或PPT动画的文件,查看预览时可能会显示错乱或异常,文件下载后无此问题,请放心下载。
2. 本文档由用户上传,版权归属用户,天天文库负责整理代发布。如果您对本文档版权有争议请及时联系客服。
3. 下载前请仔细阅读文档内容,确认文档内容符合您的需求后进行下载,若出现内容与标题不符可向本站投诉处理。
4. 下载文档时可能由于网络波动等原因无法下载或下载错误,付费完成后未能成功下载的用户请联系客服处理。