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ID:36411116
大小:7.32 MB
页数:34页
时间:2019-05-10
《GeSi基稀磁半导体的结构与性质研究》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、河北师范大学硕士学位论文Ge(Si)基稀磁半导体的结构与性质研究姓名:赵建国申请学位级别:硕士专业:凝聚态物理指导教师:侯登录20080603AbstractInmodeminformationtechnology,informationprocessingisbasedonthecontrolofthechargeofthecarrier,aswellastheinformationstoragetechniqueusesthespinofthecarriers.Theuseofbothspinandchargeofthec
2、arriersappearspromisingforanewclassofdevicesuchaschipsthatintegratememoryandmicroprocessorfunction,magneticdevicesexhibitinggainandultra—lowpowertransistors.Muchoftheattentionondilutedmagneticsemiconductor(DMS)materialsisduetoitspotentialapplicationinwhatisnowcalled
3、‘‘spintronics”devices,whichexploitspininmagneticmaterialsalongwithchargeofelectronsinsemiconductors.BecausethetraditionalsemiconductorindustryisbasedontheSimaterial,andGe(Si)magneticsemiconductoriseasytoachieveintegrationwiththecurrentsemiconductorindustryandtheinte
4、gration,whichsemiconductorhaswideruseofvalue.WepreparedMnxGel.xandMn。Sil.xsamplesbymagnetronsputteringwithhighconcentrationofMn,theconcentrationofMnisashighas19%inMnxGel.xsample,andtheconcentrationofMnisashighas15%inMnxSil.xsample.Westudythestructure,chemicalstate,t
5、ransportofsamples,magneticdomain,resistivitydependenceofMnconcentrationandtemperatureandHaileffect.Conclusionsareasfollows:TheXRDmeasurementshowsnodiffractionpeaksinthedepositedMnxGel.xsamples,wichsuggeststhatthesamplesareofnocrystallization.ButtheMnxGel.xsampleswit
6、h600。Cannealingshowsinglephasestructure.ThecrystallatticeconstantincreaseswiththeMnconcentration.Nofilmsshowclearmagneticdomainstructureunderamagneticforcemicroscope(MFM),whichsuggestthattherearenoclustersinthesample.AFMshowsthatallfilmshaveauniformparticlesizedistr
7、ibution,andacolumnargrowthpattern,withparticlesizeof6nnlandroughnessof3n/ninMnxGel-xsample.X-rayphotoelectronspectroscopy(xPs)measurementsindicatethattheMnatomsaleinthe+2valence.Theresistivityversustemperature(R-T)measurementsshowsobviouslysemiconductingproperty.The
8、HalleffectmeasurementofMnxGel.xmagneticsemiconductorsshowsnormalhalleffect,andallthesamplesarep-typesemiconductor.Concentrationofcarders,w
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