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1、科學與工程技術期刊第四卷第一期民國九十七年73JournalofScienceandEngineeringTechnology,Vol.4,No.1,pp.73-79(2008)氮化鋁薄膜表面結構及感測特性之研究12江榮隆黃安立1中州技術學院電子工程系2中州技術學院工程技術研究所彰化縣員林鎮山腳路三段二巷六號摘要本研究係利用射頻濺鍍系統(R.F.sputteringsystem)於工作壓力10mTorr,分別以不同溫ooo度(50C、100C及150C)備製氮化鋁薄膜於氧化銦錫玻璃(indiumtinoxide,ITO)、矽(silico
2、n)及二氧化矽(SiO2)三種不同基板上,以形成AlNX/ITOGlass、AlNX/Si及AlNX/SiO2/Si之結構,並利用場發射掃描式電子顯微鏡(field-emissionscanningelectronmicroscope,FE-SEM)觀察氮化鋁薄膜之表面結構,且於AlN薄膜上備製離子選擇物(ionophores),以成為氯離子感測膜,-5利用半導體參數分析儀(keithley4200)於1~10mol/L之氯化鉀(KCl)、氯化鈉(NaCl)及氯化鋰(LiCl)待測溶液中進行測量,以探討氮化鋁薄膜於氯離子感測元件之感測特性
3、。實驗結果顯示氮化鋁薄膜沉積於ITOGlass基板晶粒緻密度高,且晶粒平均大小為100~150nm,且應用於氯離子感測元件擁有高感測範圍,置於KCl待測液之電壓感測度為121.48mV/pCl,置於NaCl待測液之電壓感測度為143.02mV/pCl,而置於LiCl待測液之電壓感測度為168.72mV/pCl,且線性度趨近於1。關鍵詞:射頻濺鍍、氮化鋁、氧化銦錫玻璃、場發射掃描式電子顯微鏡、氯離子StructureandSensingPropertiesonaThinAlNFilm12JUNG-LUNGCHIANGandAN-LIHUAN
4、G1DepartmentofElectronicEngineering,ChungChouInstituteofTechnology2GraduateSchoolofEngineeringTechnology,ChungChouInstituteofTechnology6,Lane2,Sec.3,ShanchiaoRd.,YuanlinChanghua51003,Taiwan,R.O.C.ABSTRACTInthisstudy,athinaluminumnitride(AlN)filmwaspreparedonvarioussensing
5、structures(e.g.,AlNX/ITOglass,AlNX/SiandAlNX/SiO2/Si)byr.f.sputteringtechnology.Thesputteringoopressurewassetat10mTorr,andthesubstratetemperaturesweremaintainedat50C,100C,ando150C,respectively.Afterwards,afield-emissionscanningelectronmicroscope(FE-SEM)wasutilizedtoanalyz
6、ethesurfacestructureoftheAlNXfilm.TheionophoreswereimmobilizedontheAlNXsurfaceandthechlorineionsensorfinished.Moreover,thesensordeviceswereimmersedin-5concentrationsbetween1mol/Land10mol/LofKCl,NaClandLiClbuffersolutions,respectively.Thesensing-characteristiccurvesweremea
7、suredandmonitoredwithasemiconductorparameteranalyzer(I-Vmeasurement,keithley4200).Theexperimentalresultsrevealedthatthegrainsizeof74科學與工程技術期刊第四卷第一期民國九十七年theAlNXfilmwasabout100~150nm;moreover,thechlorineionsensitivitieswere121.48mV/pCl,143.02mV/pCland168.72mV/pClforKCl,NaC
8、landLiClsolutions,respectively.Thissensitivityresponseisfairlylinear,thelinearregressionbeingclo