Deposition of amorphous Fe–Zr alloys by magnetron co-sputtering.pdf

Deposition of amorphous Fe–Zr alloys by magnetron co-sputtering.pdf

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1、ARTICLEINPRESSVacuum81(2007)1213–1215www.elsevier.com/locate/vacuumDepositionofamorphousFe–Zralloysbymagnetronco-sputteringa,baAleksandrasIljinas,DariusMilcˇius,JuliusDudonisaDepartmentofPhysics,KaunasUniversityofTechnology,Studentu50,LT-51368Kaunas,LithuaniabLithuanianEnergyIn

2、stitute,Breslaujos3,LT-44403Kaunas,LithuaniaAbstractInthelastdecades,amorphousmetalalloyswereunderintensiveresearchbecauseoftheirspecificproperties.Furthermore,amorphousmagneticmetallicalloys,alsoknownasmetallicglasses,areimportantbecauseoftheirapplicationinelectronicindustry,inf

3、ormationtechnology,recordingmedia,etc.[ShenJ,KirschnerJ.Surf.Sci.2002;500:300–322;BassJ,PrattJrWP.Physica2002;B321:1–8;DugaevVK,VygranenkoYu,VieiraM,et.al.Physica2003;E16:558–562].Fe1xZrxamorphousfilmsco-condensedbymagnetronsputteringwerestudied.X-raydiffractionmethodswereapplie

4、dforstudyingaglassformingrangevs.thecompositionoftheelements.Electricalpropertiesofthesamplesweremeasuredbyso-calledfour-probeandVanderPauwmethods.ThesurfacemorphologywasinvestigatedbySEM.TheresultsshowthatamorphousFe1xZrxalloyswith1.5nmcrystallitescouldbesynthesizedbymagnetron

5、co-sputteringonthesubstratesatroomtemperaturewhenthealloy’scompositionwasFe0.91Zr0.09withaverysmoothsurface.ThegrainsizeofalloysdecreasedincreasingtheZrconcentration.Theresistivityofthethinfilmsofthesealloysdependsonthecrystallinesizeandstructure.r2007ElsevierLtd.Allrightsreserve

6、d.Keywords:Amorphousmetalalloys;Fe–Zralloys;FTSsputtering;Magnetronco-sputtering1.Introductiononelayerbythemetalatomsofanothercausesanincreaseinspin-independentscattering[6]andalossoflocalMagneticmetallicalloysareimportantbecauseoftheirmagneticalignment[7].Therefore,atomicallysm

7、ooth,applicationinelectronicindustry,informationtechnology,unmixedinterfacesareessential[8,9].Thecurrentdeposi-recordingmediaespeciallyinspin-dependenttransportintionprocesseshavenotproducedthetheoreticallygiantmagnetoresistance(GMR),tunnelingmagnetoresis-predictedGMRpropertiesd

8、uetothelackofunder-tance(MTR)devicesandfornonvo

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