Springer.Electronic.Circuits.Handbook.for.Design.and.Application.(Springer.U.Tietze)

Springer.Electronic.Circuits.Handbook.for.Design.and.Application.(Springer.U.Tietze)

ID:34866455

大小:420.86 KB

页数:43页

时间:2019-03-12

Springer.Electronic.Circuits.Handbook.for.Design.and.Application.(Springer.U.Tietze)_第1页
Springer.Electronic.Circuits.Handbook.for.Design.and.Application.(Springer.U.Tietze)_第2页
Springer.Electronic.Circuits.Handbook.for.Design.and.Application.(Springer.U.Tietze)_第3页
Springer.Electronic.Circuits.Handbook.for.Design.and.Application.(Springer.U.Tietze)_第4页
Springer.Electronic.Circuits.Handbook.for.Design.and.Application.(Springer.U.Tietze)_第5页
资源描述:

《Springer.Electronic.Circuits.Handbook.for.Design.and.Application.(Springer.U.Tietze)》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库

1、Chapter27:High-FrequencyAmplifiersToday,inthehigh-andintermediate-frequencyassembliesoftelecommunicationsystems,amplifierscomposedofdiscretetransistorsarestillusedinadditiontomodernintegratedamplifiers.Thisisparticularlythecaseinhigh-frequencypoweramplifiersemployedintransmi

2、tters.Inlow-frequencyassemblies,ontheotherhand,onlyintegratedamplifiersareused.Theuseofdiscretetransistorsisduetothestatusquoofsemiconductortechnol-ogy.Thedevelopmentofnewsemiconductorprocesseswithhighertransitfrequenciesissoonfollowedbytheproductionofdiscretetransistors,

3、buttheproductionofintegratedcircuitsonthebasisofanewprocessdoesnotusuallyoccuruntilsomeyearslater.Fur-thermore,theproductionofdiscretetransistorswithparticularlyhightransitfrequenciesoftenmakesuseofmaterialsorprocesseswhicharenot(ornotyet)suitablefortheproduc-tionofinteg

4、ratedcircuitsinthescopeofproductionengineeringorforeconomicreasons.Thehighgrowthrateinradiocommunicationsystemshas,however,boostedthedevel-opmentofsemiconductorprocessesforhigh-frequencyapplications.Integratedcircuitsonthebasisofcompoundsemiconductorssuchasgallium-arseni

5、de(GaAs)orsilicon-germanium(SiGe)canbeuseduptotheGHzrange.Forapplicationsuptoapproximately3GHzbipolartransistorsaremainlyused,which,inthecaseofGaAsorSiGedesigns,areknownashetero-junctionbipolartransistors(HBT).Above3GHz,gallium-arsenidejunctionFETsormetal-semiconductorfie

6、ldeffecttransistors(MESFETs)areused.1Thetransitfrequenciesrangebetween50...100GHz.27.1IntegratedHigh-FrequencyAmplifiersInprinciple,integratedhigh-frequencyamplifiersusethesamecircuitryaslow-frequencyoroperationalamplifiers.Atypicalamplifierconsistsofadifferentialamplifieruse

7、dasavoltageamplifierandcommon-collectorcircuitsusedascurrentamplifiersorimpedanceconverters(seeFig.27.1a).Thedifferentialamplifierisoftendesignedasacascodedif-ferentialamplifiertoreduceitsreversetransmissionanditsinputcapacitance(noMillereffect).SuchcircuitsaredescribedinCha

8、p.4,Sect.4.1.Sincethetransitfrequencyofhigh-frequencytransistors(fT≈50...100GHz)isapproximately100times

当前文档最多预览五页,下载文档查看全文

此文档下载收益归作者所有

当前文档最多预览五页,下载文档查看全文
温馨提示:
1. 部分包含数学公式或PPT动画的文件,查看预览时可能会显示错乱或异常,文件下载后无此问题,请放心下载。
2. 本文档由用户上传,版权归属用户,天天文库负责整理代发布。如果您对本文档版权有争议请及时联系客服。
3. 下载前请仔细阅读文档内容,确认文档内容符合您的需求后进行下载,若出现内容与标题不符可向本站投诉处理。
4. 下载文档时可能由于网络波动等原因无法下载或下载错误,付费完成后未能成功下载的用户请联系客服处理。
相关文章
更多
相关标签