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1、MRSInternetJournalNitrideSemiconductorResearchTheDurabilityofVariousCrucibleMaterialsforAluminumNitrideCrystalGrowthbySublimationB.Liu1,J.H.Edgar1,Z.Gu1,D.Zhuang1,B.Raghothamachar2,M.Dudley2,A.Sarua3,MartinKuball3andH.M.MeyerIII41DepartmentofChemicalEngineering,KansasSt
2、ateUniversity,2DepartmentofMaterialsScienceEngineering,StateUniversityofNewYorkatStonyBrook,3UniversityofBristol,H.H.WillsPhysicsLaboratory,4OakRidgeNationalLaboratory,HighTemperatureMaterialsLaboratory,(ReceivedMonday,July12,2004;acceptedWednesday,October20,2004)Produc
3、inghighpurityaluminumnitridecrystalsbythesublimation-recondensationtechniqueisdifficultduetotheinherentlyreactivecrystalgrowthenvironment,normallyattemperatureinexcessof2100°C.Thedurabilityofthefurnacefixturematerials(crucibles,retorts,etc.)atsuchahightemperatureremainsac
4、riticalproblem.Inthepresentstudy,thesuitabilityofseveralrefractorymaterialsforAlNcrystalgrowthisinvestigated,includingtantalumcarbide,niobiumcarbide,tungsten,graphite,andhot-pressedboronnitride.Thethermalandchemicalpropertiesandperformanceofthesematerialsininertgas,aswe
5、llasunderAlNcrystalgrowthconditionsarediscussed.TaCandNbCarethemoststablecruciblematerialswithverylowelementalvaporpressuresinthecrystalgrowthsystem.Comparedwithrefractorymaterialcoatedgraphitecrucibles,HPBNcrucibleisbetterforAlNself-seededgrowth,ascrystalstendtonucleat
6、einthincolorlessplateletswithlowdislocationdensity.1Introductionthefabricationofdeepultraviolet(DUV)optoelectronicdevices[3][4].TheinitialreportsontransistorsandAluminumnitride(AlN)isoneofthemostpromisingLEDsusingAlNsubstratesdemonstrateitspromisingsubstratesfornextgene
7、rationhighpower,highfre-characteristics[5][6].Inshort,usingAlNsubstratesquency,andshortwavelengthoptoelectronicdevicesshouldsignificantlyimprovethepowerdensity,effi-basedongalliumnitride(GaN)anditsalloys[1].Itsciency,lifetime,andreliabilityofGaN-baseddevices.extraordinary
8、physical,chemical,optical,andelectricalpropertiesmakeitattractiveinIII-nitrideepitaxialfilmCurrently,severalgro
