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1、DTP0403N-ChannelEnhancementModeFieldEffectTransistorFeaturesPinDescriptionò30V/98ARDS(ON)=3.8mΩ(Type)@VGS=10VRDS(ON)=4.4mΩ(Type)@VGS=4.5VòSuperHighDenseCellDesignòReliableandRuggedòTO-220packagePIN1LeadFreeandGreenDevicesAvailable(ROHSCompliant)Applica
2、tionsòPowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystem.ABSOLUTEMAXIMUMRATINGS(Ta=25°Cunlessotherwisenoted)SymbolParameterValueUnitVDSSDrain-to-SourceVoltage30VVGSSGate-to-SourceVoltage±20VID*ContinuousDrainCurrent@TJ=125℃98VGS
3、=10VAIDM*PulsedDrainCurrent(tp≤10us)490IS*DiodeContinuousForwardCurrent50ATA=25℃100WPD*TotalPowerDissipationTA=70℃90WTJ,OperatingandStorageTemperatureRange-55to150℃TSTGThermalResistance,RthJA*0.73℃/WJunction-to-AmbientMaximumLeadTemperatureforTL260℃Sol
4、deringPurposes,1/8″fromcasefor10secondsNote:*SurfaceMountedon1in*1inpadarea,t≤10Sec.May2011DocID0065Rev11/8ElectricalcharacteristicsElectricalcharacteristicsTCASE=25°CunlessotherwisespecifiedParameterSymbolTestConditionsMin.Typ.Max.UnitòstatesDrain-So
5、urceBreakdownVoltageBVDSSVGS=0V,IDS=250μA30VZeroGateVoltageDrainCurrentIDSSVDS=30V,VGS=0V1µAGate-bodyleakagecurrentIGSSVGS=±20V,VDS=0V±100nAGateThresholdVoltageVGS(th)VDS=VGS,ID=250µA1.52.5VVGS=10V,ID=30A3.84.3Drain-SourceOn-stateResistanceRDS(ON)(a)mΩ
6、VGS=4.5V,ID=20A4.54.9DiodeForwardVoltageVSDVGS=0V,IS=10A1.5VForwardTranconductancegFSVGS=7V,ID=2A23SòGatechargeTotalgatechargeQgVDS=15V,ID=1A,37Gate-sourcechargeQgsVGS=10V7nCGate-DrainChargeQgd16òDynamic(b)InputcapacitanceCissVDS=15V,VGS=0V2850Outputca
7、pacitanceCossf=1.0MHZ511pFReversetransfercapacitanceCrss385òSwitchingtimesTurn-OnDelayTimetD(ON)VDD=15V,31ID=40A,RiseTimetr26VGEN=10VnsTurn-OffDelayTimetD(OFF)44RGEN=4.7ohmFallTimetf24Notes(a).SurfaceMountedonFR4Board,t≦10sec(b).PulseTest:PulseWidth≦30
8、0Us,Duty≦2%(c).Guaranteedbydesign,notsubjecttoproductiontesting.May2011DocID0065Rev12/8Figure1.OutputCharacteristicsFigure2.TransferCharacteristicsID/AID/AVGS=4VTJ=125℃25℃1025-55℃VGS=10,9,8,7,6,5V820615VGS=3V410250123456VDS/V011.21.61.8