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1、第27卷第9期半导体学报Vol.27No.92006年9月CHINESEJOURNALOFSEMICONDUCTORSSep.,20063ARadialStubTestCircuitforMicrowavePowerDevices1,2222LuoWeijun,ChenXiaojuan,LiangXiaoxin,MaXiaolin,2,•1LiuXinyu,andWangXiaoliang(1InstituteofSemiconductors,ChineseAcademyofSciences,Beij
2、ing100083,China)(2InstituteofMicroelectronics,ChineseAcademyofSciences,Beijing100029,China)Abstract:Withtheprinciplesofmicrowavecircuitsandsemiconductordevicephysics,twomicrowavepowerde2vicetestcircuitscombinedwithatestfixturearedesignedandsimulated,who
3、sepropertiesareevaluatedbyapa2rameternetworkanalyzerwithinthefrequencyrangefrom3to8GHz.Thesimulationandexperimentalresultsverifythatthetestcircuitwitharadialstubisbetterthanthatwithout.Asanexample,aC2bandAlGaN/GaNHEMTmicrowavepowerdeviceistestedwiththed
4、esignedcircuitandfixture.Witha514GHzmicrowaveinputsignal,themaximumgainis8175dB,andthemaximumoutputpoweris3312dBm.Keywords:radialstub;testcircuit;GaN;HEMTEEACC:1350CLCnumber:TN4Documentcode:AArticleID:025324177(2006)0921557205thetestcircuits.Inaddition,
5、thesolderingofthe1IntroductionSMTcapacitorsmayalsocausethesameproblemathighfrequencies.RadiofrequencyhighpowerdevicesarekeyInordertoevaluateperformanceofapackagedcomponentsinradarandwirelesscommunicationmicrowavehighpowerdevice,itisnecessarytosystemstha
6、tdirectlyinfluencethecommunicationconsidertheloss,reflection,oscillationprevention,[1]quality.However,duetotheirhighoperatingandothercharacteristicsofthetestcircuit.Thisfrequency,itisquitedifficulttocharacterizeami2paperconcentratesontheuseofaradialstub
7、tobi2crowavedevice’sperformance,especiallyapack2asthemicrowavepowerdeviceinaprintedcircuitageddevice.Sinceadeviceneedsnotonlyanon2board(PCB)testcircuit.Withtheexampleofan[2]wafertestduringtheprocessing,butalsotobeAlGaN/GaNHEMTmicrowavepowerdevice,packag
8、edandtestedagainbeforebeingincorporat2thispaperanalyzesthemeasuringprincipleandedintoasystem,atestcircuitwithafixtureforthemethodsofthemainparametersofthedevice.Thepackageddeviceisabsolutelynecessary.Itactsasinfluentialfactorsdur
