069. Chemical-Mechanical Planarization of Semiconductor Materials (2004)

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1、SpringerSeriesinMATERIALSSCIENCE69Springer-VerlagBerlinHeidelbergGmbHONLINELIBRARYPhysicsandAstronomyspringeronline.comSpringerSeriesinMATERIALSSCIENCEEditors:R.HullR.M.Osgood,Jr.J.ParisiH.WarlimontTheSpringerSeriesinMaterialsSciencecoversthecompletespectrumofmaterialsphysics,includingfundamental

2、principles,physicalproperties,materialstheoryanddesign.Recognizingtheincreasingimportanceofmaterialsscienceinfuturedevicetechnologies,thebooktitlesinthisseriesreflectthestate-of-the-artinunderstandingandcontrollingthestructureandpropertiesofallimportantclassesofmaterials.61FatigueinFerroelectricC

3、eramics67NondestructiveandRelatedIssuesMaterialsCharacterizationByD.C.LupascuWithApplicationstoAerospaceMaterialsEditors:N.G.H.Meyendorf,P.B.Nagy,62EpitaxyandS.l.RokhlinPhysicalPrinciplesandTechnicalImplementation68DiffractionAnalysisByM.A.Herman,W.Richter,andH.SitteroftheMicrostructureofMaterial

4、sEditors:E.J.MittemeijerandP.Scardi63FundamentalsoflonIrradiationofPolymers69Chemical-MechanicalPlanarizationByD.FinkofSemiconductorMaterialsEditor:M.R.Oliver64MorphologyControlofMaterialsandNanoparticles70IsotopeEffectApplicationsinSolidsAdvancedMaterialsProcessingByG.V.PlekhanovandCharacterizat

5、ionEditors:Y.WasedaandA.Muramatsu71DissipativePhenomenainCondensedMatter65TransportProcessesSomeApplicationsinIonIrradiatedPolymersByS.DattaguptaandS.PuriByD.Fink72PredictiveSimulation66MultiphasedCeramicMaterialsofSemiconductorProcessingProcessingandPotentialStatusandChallengesEditors:W.-H.Tuana

6、ndJ.-K.GuoEditors:J.DabrowskiandE.R.WeberSerieshomepage-springer.deVolumes10-60arelistedattheendofthebook.M.R.Oliver(Ed.)Chemical-MechanicalPlanarizationofSemiconductorMaterialsWith298FiguresSpringerDr.MichaelR.OliverRodelFellow,RodelInc.14625NWSkylineBoulevardPortland,OR97231,USAE-mail:MOliver@R

7、odel.comSeriesEditors:ProfessorRobertHullProfessorJiirgenParisiUniversityofVirginiaUniversitatOldenburg,FachbereichPhysikDept.ofMaterialsScienceandEngineeringAbt.Energie-undHalbleiterforschungThorntonHallCarl-von-Ossie