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时间:2019-03-02
《半导体物理学刘恩科第七版考题答案》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库。
1、第三章习题和答案19-318-37.①在室温下,锗的有效态密度Nc=1.0510cm,NV=3.910cm,试求锗的**载流子有效质量mnmp。计算77K时的NC和NV。已知300K时,Eg=0.67eV。77k时Eg=0.76eV。求这两个温度时锗的本征载流子浓度。②77K时,锗的电子浓度17-3为10cm,假定受主浓度为零,而Ec-ED=0.01eV,求锗中施主浓度ED为多少?kTm37(.1)根据N2(0n)2c22kTm30p2Nv2(2)得2222Nc331m0.56
2、m5.110kgn0k0T2122N23v31mp0.29m02.610kgkT20(2)77K时的N、NCV''N(C77K)T3N(300K)TC'77319773183NN()1.0510()1.3710/cmCC300300'77318773173NN()3.910()5.0810/cmVV300300Eg1(3)n(NN)2e2koTicv0.671室温:n(1.0510193.91018)2e2k03001.7
3、1013/cm3i0.76177K时,n(1.3710185.081017)2e2k0771.98107/cm3iNDNDNDnn0DEDEFEDEcECEFEDno12expk0T12ek0T12ek0TNC17Nn(12eEDno)1017(12e0.0110)1.171017/cm3D018koTNC0.0671.3710Eg18.300K时:n(NN)2e2k0T2.01013/cm3icVeg12k0T'''215350
4、0K时:ni(NCNV)e6.910/cm根据电中性条件:n0p0NDNA0222n0n0(NDNA)ni0npn00i1NNNN2DADA22n()n0i221NNNN222ADADp()n0i22153n0510/cmT300K时:103p810/cm0153n09.8410/cmt500K时:153p4.8410/cm02215.掺有浓度为每立方米为10硼原子的硅材料,分别计算①300K;②
5、600K时费米能级的位置及多子和少子浓度(本征载流子浓度数值查图3-7)。103(1)T300K时,n1.510/cm,杂质全部电离ai163p10/cm02ni43n2.2510/cm0p016p010EEkTln0.026ln0.359eVEi010n10ip0或EEkTln0.184eVEV0Nv163(2)T600K时,n110/cmi处于过渡区:pnN00A2npn00i163p1.6210/cm0153n6.1710/cm016p01.621
6、0EEkTln0.052ln0.025eVFi016ni11013317.施主浓度为10cm的n型硅,计算400K时本征载流子浓度、多子浓度、少子浓度和费米能级的位置。13313317.si:N10/cm,400K时,n110/cm(查表)DinpND0ND122132,nND4ni1.6210npn22i2ni123p6.1710/cm0no13n1.6210EEkTln0.035ln0.017eVFi013ni110第四章习题及答案1.300K
7、时,Ge的本征电阻率为47cm,如电子和空穴迁移率分别为223900cm/(V.S)和1900cm/(V.S)。试求Ge的载流子浓度。11解:在本征情况下,npn,由1/知inqupqunq(uu)npinp11133n2.2910cmi19q(uu)471.60210(39001900)np2.试计算本征Si在室温时的电导率,设电子和空穴迁移率分别为221350cm/(V.S)和500cm/(V.S)。当掺入百万分之一的As后,设杂质全部电离,试计算其电导率。比本征S
8、i的电导率增大了多少倍?22解:300K时,un1350cm/(VS),up500cm/(VS),查表3-2或图3-7可103知,室温下Si的本征载流子浓度约为n1.010cm。i本征情况下,10-196nqupqunq(uu)1101.60210(1350+500)3.010S/cmnpinp11金钢石结构一个原胞内的等效原子个数
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