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ID:340431
大小:1.04 MB
页数:39页
时间:2017-07-25
《双光栅干涉表面轮廓测量传感器 毕业设计(论文)》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、双光栅干涉表面轮廓测量传感器摘要随着现代制造朝着高精密方向发展,满足一般实验和生产条件下的低成本、方便实用的高精密位移计量测试手段和测量传感器面临紧迫的需求。本文中介绍了一种低成本、高精度的接触式微位移传感器。该装置由半导体激光器、双光栅干涉单元、干涉条纹光电接收与信号处理电路、计数细分与位移数显单元等组成。首先,文中讲到了光栅干涉单元的选用,传感器所用激光器的介绍及由日本滨松公司生产的型号为S6695-01的四象限光电探测器介绍。紧接着讲述了由信号前置放大所得两路正交信号滤波、消除直流偏置和差分放大,及整形为方波信号的各部分电路的具体设计及GAL16V8进行四倍频细分和辨向处理,最
2、后送到AT89C51单片机实现干涉条纹计数,并用共阴极七段数码管显示出计数值的具体电路设计及计量位移程序设计,并画出了相应的电气原理图和PCB板图。在各部分分完成之后进行程序的软件模拟调试及全文总结。关键词:双光栅干涉,高精度,四象限光电探测器,四倍频细分IDOUBLEGRATINGINTERFEROMETERSENSORFORSURFACEPROFILEMEASUREMENTABSTRACTWiththedevelopmentofmodernmanufacturing,highprecisionmeasuringanddisplacementsensorisusedmoreurge
3、ntlywhichislow-costandconvenientinnormalexperimentandproductionconditions.Thispaperintroducesalow-cost,high-precisionmicro-displacementsensorcontacts.Thesensorismadeupofsemiconductorlaser,doublegratinginterferencecell,photoelectricreceiver,thesignalprocessingcircuitandsoon.Firstly,thispaperspec
4、ificallyintroducesdoublegratinginterferometerunits,thelaserusedinsensorandthefour-quadrantoptoelectronicdetectorproducedbytheJapanesecompanyHamamatsumodelS6695-01.Secondly,Iexplainthespecificdesignofeachpartofthecircuit,including,thesignalfilteringaboutthetwoorthogonalsignalfrompreamplifiercirc
5、uit,eliminatingDCbiasanddifferentialamplification,shapingforthesquarewavesignal,usingGAL16V8forfoursub-frequencyandidentifyingthedirection,sendingthesquarewavesignaltotheMCUAT89C51tocount,andusingthecommoncathodesevensegmentLEDtodisplaythecount.AtlastIneedtowritetheprogramofmeasuringdisplacemen
6、tanddrawelectricalschematicsandPCBboards.Softwaresimulationtestoftheprogramsandsummaryoffullpaperarecarriedoutafterthecompletionofeachpartofthedesign.KEYWORDS:Doublegratinginterference,High-precision,Four-quadrantoptoelectronicdetector,FourthharmonicsubdivisionII目录前言............................
7、................................................................................1第1章双光栅干涉表面轮廓测量传感器工作原理............................21.1微位移传感器概况及本课题研究内容....................................21.1.1微位移传感器发展概况............................
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