zno微纳米结构的可控制备、生长机理及性能的研究

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1、ABSTRACTAsanimportantlow-costsemiconductorfunctionalmaterialwithlargebandgap(3．37eV)andlargeexcitationbindingenergy(60meV)，zincoxide(ZnO)isrecognizedaSoneofthemostpromisingmaterialsforoptoelectronicapplications．NanostructuredZnOhaSdrawnconsiderableattentionduetoitsuniqueelectrical，mechanical，andopt

2、icalproperties，inadditiontoitsapplicationsinnumerousfields，suchassolarcells，gaSsensors，piezoelectricmaterials，photoniccrystals，andoptoelectricdevices．However,therearestillthreebasicquestionsoftheZnOnanomaterial：firstly,thespecificsurfaceareaofnanoZnOmaterialsarelow；Secondly,thecontrollablepreparati

3、onoforderlynanoarrayisdifficult，andtheelectron-holerecombinationrateishighindisorderedstructures，whichleadtoalowphotoelectricalconversion．Thirdly,themechanismoftheformationofthenanostructureisstillnotclear．Asaresult，thereisofgreatsignificancetostudythepreparationofhighspecificsurfacearea．Inthiswork

4、，one—dimensionalandthree—dimensionaldifferentmorphologiesZnOnanostructurehavebeensuccessfullypreparedbyasimplehydrothermalmethod，andthemainrearchworkandresultswereaSfollowing．WithZn(N03)2andC6H12N4aSrawmaterial，theorderlyZnOnanorodarrayhaSbeensuccessfullypreparedbycontrollingtheprecursorconcentrati

5、onandreactiontime．TheresultsdemonstratedthattheoptimumconditionofpivotalcraftworkoftheZnOnanorodsarray：precursorconcentrationisO．02mol／L．thereactiontimeis4h．DuetothethinstructureandroughsurfacewhichCanabsorbmoredyesandmorereactivecenter,theZnOnanorodsarraypreparedatthisoptimumconditionshowsthebestp

6、hotoelectricperformance．TheThree·-dimensionalseaurchinZnOmicro·-nanostructurewasfirstsuccessfullypreparetedbyhydrothermalmethodinZn(Y03)2一NH3，withFTOconductiveglassaSthebase．TheZnOmicro—nanostructurecrystalissinglecrystalstructure，thelatticedistance(0001)isabout0．26nln．WeCanprepareThree-dimensional

7、seaurchinZnOmicro—nanostructurebycontrollingthereactiontemperature，reactiontimeandpHvalue．AndtheresultsIIIdemonstratedthattheoptimumconditionofpivotalcraftworkoftheZnOnanorodsarray：s：pHvalueis9，thereactiont