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1、JournalofTheElectrochemicalSociety,1552G39-G432008G390013-4651/2007/1552/G39/5/$23.00©TheElectrochemicalSocietyInterfaceChemistryandAdhesionStrengthBetweenPorousSiOCHLow-kFilmandSiCNLayersa,*,zbb,*Hung-ChunTsai,bShou-YiChang,Jien-YiChang,Su-JienLin,andbYee-ShyiChangaDepartmentof
2、MaterialsScienceandEngineering,NationalChungHsingUniversity,Taichung,TaiwanbDepartmentofMaterialsScienceandEngineering,NationalTsingHuaUniversity,Hsinchu,TaiwanInthisstudy,theinterfacechemistryandadhesionstrengthbetweenaporousSiOCHextra-low-dielectric-constantÞlmandSiCNetchstoplayersw
3、ereinvestigatedwithdifferentplasmatreatments.Aninterlayerof6nmthickbetweentheporousSiOCHÞlmandSiCNlayerswasfoundtobecomposedofSi,N,C,andO.TheSiOCH/SiCNinterfacewasconstructedbymixingbonds,includingSiÐCÐN,SiÐNÐC,SiÐOÐC,SiÐO2,etc.UnderH2andNH3plasmatreatments,alargeamountofweakSiÐCH3an
4、dSiOÐCH3bondswerebroken,andmoreSiÐOrelatedbondsofhighbindingenergyformedattheinterfaces.Moreover,undertheaccumulationofsufÞcientshearstressesaroundtheindentedregionsduringnanoindentationtests,interfacedelaminationbetweentheporousSiOCHÞlmandSiCNlayersoccurred.Theinterfaceadhesionenergy
5、betweenuntreatedporousSiOCHÞlmandSiCNlayerswasaccordinglymeasuredas1.68J/m2.Afterplasmatreatments,especiallyNHplasma,theadhesionstrengthwas3effectivelyimprovedto2.13J/m2.©2007TheElectrochemicalSociety.DOI:10.1149/1.2814159Allrightsreserved.ManuscriptsubmittedAugust29,2007;revisedman
6、uscriptreceivedOctober15,2007.AvailableelectronicallyDecember18,2007.13,21-27Alargenumberoflow-dielectric-constantlow-kmaterialshavestresses.Itisessentiallyfavorablethatonlyaverysmallin-beendevelopedasintermetaldielectricsIMDsinmultilevelinter-dentedarea,thesizeofafewmicrometers,i
7、sdamagedduringthisconnectstoreducetheparasiticcapacitanceofinterconnectsinthetest.Thus,inthisstudy,theadhesionstrengthanddelamination1-7generationbelow65nm.Amongthem,chemicallyvapordepos-behaviorofatypicalinterfacebetweenporousSiOCHlow-kÞlmitedCVDlow-kmaterialshaveattractedmuchatten
8、tionb
