粉煤灰微珠制备sic系复相材料的分析

粉煤灰微珠制备sic系复相材料的分析

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大小:13.76 MB

页数:63页

时间:2019-03-01

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1、15involvedinthereaetion:therefore,flyashmierosPhereseann’tmaintainitssPheriealshaPe.(4)ThesPhericalmorphologyofPreParedProduet15relatedtothesurvivorshiPofmullite.Exeesseontentofearbonblaekba币ertheadhesionamongmicrosPheres,which15neeessarytomaintaintheshaPeofsiC/MullitesPheres.2SIChollowsPheresP

2、reParedbymicrowaveearbothermalreductionreaetionwithflyashandearbonsPheretemPlateTheresultsshowthat:(1)SIChollowsPherescouldbePreParedatn(C):n(5102)=4.2,0.5hat13O0oC,argonatmosphere.TheSIChollowsphereshaveretainedthesimilarsizewiththeoriginalearbonsPheretemPlate.(2)TheshellofSIChollowsPhere15eom

3、PosedofalotofcurvingSICwires.TheformationofeurvingSICwiresshouldbeattributingtotheVLSandVSmeehanism.(3)Theshellthieknesseanbemodulatedbythen(C):n(5102)radio.ProPerlyinereasingtlleratio15benefieialtosynthesizeSIChollowsPheres.Conversely,it15easytosynthesizeSICsolidsPheres.3SIC/AIN一Poly灯PeeomPosi

4、tespheresPreparedbymicrowaveearbothermalreduetionnitridationreactionwithflyashsPheresandearbonsPheretemPlateTheresultsshowthat:(l)SIC/AIN一PolytyPeeomPositesPhereswithgradientstruetureeouldbePreParcdatn(C):n(5102)=4.2,0.5hat1300OC,nitrogenatmosPhere.(2)SIC/AIN一polyt即eeomPositespheresareeomposedo

5、fthreelayers:theshell(AIN一PolytyPe),thetransitionlayer(SICnanowires),andtheeore(SICwhiskersandflower一likeSICerystals).(3)TheformationProeessofSIC/AIN一Polyt邓eeomPositesPheresasfollows:First,SIChollowsPhereswhieh15comPosedofSICnanowiresformed.ThentheAI,A12OsteamdeeomPosedfromtheA1203innitrogenatm

6、osPheredePositonthesurfaeeofSIChollowsPherestoformtheouterlayerofAIN一PolytyPe.Afterthat,thesurfaeedensifieationresultsininternalandexternalgasexehangeslowingdown,wliiehehangingthegassaturationofgrowthofintemalSIC,50that5iCgrowsalongthedifferentdireetionsofthesidelinewhiehresultintheformationoff

7、lower一likedSICerystals.Keywords:flyashmicrosPheres,mierowaveearbothermalreduetion,SIC/MulliteeomPositesPheres,SIChollowsPhereS,SIC/AIN一POlytyPecomPOSiteSPhereS1V目录摘要.................................................................

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