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时间:2019-02-28
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1、NANOLETTERSBuildingBlocksforIntegratedGraphene2007Vol.7,No.11Circuits3253-3259DenisA.Areshkin*,†andCarterT.White‡GeorgeWashingtonUniVersity,Washington,DC20052,NaValResearchLaboratory,Washington,DC20375ReceivedMarch26,2007;RevisedManuscriptReceivedMay30,2007ABST
2、RACTTheobservationofsinglesheetsofgraphite(graphene)presentsnewpossibilitiesforcarbon-basednanoelectronics.Wereportdefecttolerantconfigurationsforanearlyreflectionless120°turnandnearlyreflectionlesssymmetricandasymmetricsplitters,whichcanbecutfromgraphene.Conne
3、ctionsbetweenzigzagstripsofdifferentwidthscanbemadewitheitherloworhighreflectancedependingontheconnectionshape.Therecentobservationofisolatedgraphitesheets(graphene)attemptstocreateall-grapheneelectronicnanodevicesandsupportedbyinsulatingsubstrates1-4providesne
4、wpossibili-circuitspatternedfromeitherasinglegrapheneplaneortiesforcarbon-basednanoelectronics.Thepotentialimpor-multipleplanesseparatedbylayersofinsulatingmaterial.tanceofgrapheneasanelectronicmaterialispartiallybasedEithercircuitconceptrequirespassiveelements
5、andintercon-uponthefollowingproperties:(1)Easyatomicplanenectsforwiringindividualcircuitelements.Thewiringturnslaminationandstrongbondingwithintheplanemakeouttobeanontrivialissuebecauseasweshallseeonlyagraphenefabricationtechnologicallyaccessiblethroughbothfews
6、pecificGNSpatternsthathavenearlyidealconductancemechanicalexfoliation2,3andepitaxialgrowth.4(2)Devicesandcantransmitelectronfluxwithoutlosses.Mostotherandintegratedcircuits(ICs)couldbeprocessedfromapatternspossesssubstantialreflectivityandcannotbeusedgraphenesh
7、eetusingtheexistingplanartechnologies:forwiringpurposesdespitetheirmetallicnature.Inthiselectron-orion-beamlithography5-7ordirectfocusedpaper,wesuggestgeometricalconfigurationsfor(1)reflec-electron8orion-beam9writing.Thelattertwocouldbeverytionlessinterconnects
8、and(2)highlyreflectivepatternsprecisebecauseofthelowelectronorionfluxrequiredforanalogoustoresistors.carvingasingleatomicplane,whichdecreasestheCoulombPerhapsitiseasiesttomo
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