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1、第16卷第12期光学精密工程Vol.16No.122008年12月OpticsandPrecisionEngineeringDec.2008文章编号10042924X(2008)1222378206压电双晶片的有限元分析及实验李龙土,邬军飞,褚祥诚,季叶(清华大学材料科学与工程系新型陶瓷与精细工艺国家重点实验室,北京100084)摘要:采用有限元分析方法,分析了压电双晶片悬臂梁的位移形变特征。研究了金属弹性层、压电陶瓷片的材料属性及几何尺寸对双晶片偏转位移的影响;计算了双晶片的弹性模量、厚度以及加载电压与位移形变产生弯应力的关系;通过位移测试、弯应力测试等相关实验对有限元分析
2、进行了验证。当加载电压为60V(120Vp2p)时,双晶片的偏转位移和弯应力分别为166Lm和34.7m#N,实验结果证明本文所建的有限元模型是合理有效的。此外,测试了压电双晶片的振动特性,测得其谐振频率为310Hz,在该频率下加载20Vp2p电压,其端部位移输出即可达1.7mm。有限元分析结果及实验验证为压电双晶片结构的优化设计提供了依据。关键词:压电双晶片;有限元法;PZT;偏转位移中图分类号:TN384文献标识码:AFiniteelementanalysisandexperimentonpiezoelectricbimorphLILong2tu,WUJun2fei,CH
3、UXiang2cheng,JIYe(StateKeyLaboratoryofNewCeramicsandFineProcessing,DepartmentofMaterialScienceandEngineering,TsinghuaUniversity,Beijing100084,China)Abstract:ThedeformationofbimorphisanalyzedbyusingtheFiniteElementMethod(FEM).Theinfluencesofmiddleelasticbeamandpiezoelectriclayeronthedeflecti
4、onactuatorarestudied.Thecorrelationsoftheappliedvoltage,theelasticmodulusofbeamandthethicknessofpiezoelectriclayerareanalyzedquantitativelytoprovideatheoreticalbasisanddesignmethodforthebimorphactuators.Themechanicalforcederivedfromthebimorphdeformationisalsostudied.Furthermore,experi2ments
5、arecarriedouttovalidatethefiniteelementmodel.Thevilidationshowsthatthetip2deflectioncanbeashighas166Lmatavoltageof60V,whilethemechanicalforceis34.7m#N.Theexperi2mentresultsdemonstratethatthepiezoelectricbimorphmodelusedinthispaperisfeasibleandeffec2tive.Moreover,theresonancepropertyofthebim
6、orphismeasuredbythepolytec3002Fscanningvi2brometer.Thebimorphperformsanexceedingdeflectionabout1.7mmatthetipwhenitresonatesatafrequencyabout310Hzunderanalternatingvoltageof20Vp2p.Thesenumericalandexperimentalresultsareusefultodesignandoptimizethepiezoelectricbimorph.Keywords:piezoelectricbi
7、morph;FiniteElementMethod(FEM);PZT;tip2deflectionReceiveddate:2007209220;Reviseddate:2008205230.Foundationitem:SupportedbytheNSAF(No.10676015);theNationalNaturalScienceFoundationofChina(No.50621201);theNational863HighTechnologyResearchandDevelopmentProgr
