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1、查询SGH20N60RUFD供应商捷多邦,专业PCB打样工厂,24小时加急出货SGH20N60RUFDIGBTSGH20N60RUFDShortCircuitRatedIGBTGeneralDescriptionFeaturesFairchild'sRUFDseriesofInsulatedGateBipolar•Shortcircuitrated10us@TC=100°C,VGE=15VTransistors(IGBTs)providelowconductionandswitching•Highs
2、peedswitchinglossesaswellasshortcircuitruggedness.TheRUFD•Lowsaturationvoltage:VCE(sat)=2.2V@IC=20Aseriesisdesignedforapplicationssuchasmotorcontrol,•Highinputimpedanceuninterruptedpowersupplies(UPS)andgeneralinverters•CO-PAK,IGBTwithFRD:trr=50ns(typ.)
3、whereshortcircuitruggednessisarequiredfeature.ApplicationsAC&DCmotorcontrols,generalpurposeinverters,robotics,andservocontrols.CGTO-3PEGCEAbsoluteMaximumRatingsTC=25°CunlessotherwisenotedSymbolDescriptionSGH20N60RUFDUnitsVCESCollector-EmitterVoltage600
4、VVGESGate-EmitterVoltage±20VCollectorCurrent@TC=25°C32AICCollectorCurrent@TC=100°C20AICM(1)PulsedCollectorCurrent60AIFDiodeContinuousForwardCurrent@TC=100°C25AIFMDiodeMaximumForwardCurrent220ATSCShortCircuitWithstandTime@TC=100°C10usPDMaximumPowerDissi
5、pation@TC=25°C195WMaximumPowerDissipation@TC=100°C75WTJOperatingJunctionTemperature-55to+150°CTstgStorageTemperatureRange-55to+150°CMaximumLeadTemp.forSolderingTL300°CPurposes,1/8”fromCasefor5SecondsNotes:(1)Repetitiverating:Pulsewidthlimitedbymax.junc
6、tiontemperatureThermalCharacteristicsSymbolParameterTyp.Max.UnitsRqJC(IGBT)ThermalResistance,Junction-to-Case--0.64°C/WRqJC(DIODE)ThermalResistance,Junction-to-Case--0.83°C/WRqJAThermalResistance,Junction-to-Ambient--40°C/W©2002FairchildSemiconductorCo
7、rporationSGH20N60RUFDRev.B1SGH20N60RUFDElectricalCharacteristicsoftheIGBTTC=25°CunlessotherwisenotedSymbolParameterTestConditionsMin.Typ.Max.UnitsOffCharacteristicsBVCESCollector-EmitterBreakdownVoltageVGE=0V,IC=250uA600----VDBVCES/TemperatureCoefficie
8、ntofBreakdownDTVoltageVGE=0V,IC=1mA--0.6--V/°CJICESCollectorCut-OffCurrentVCE=VCES,VGE=0V----250uAIGESG-ELeakageCurrentVGE=VGES,VCE=0V----±100nAOnCharacteristicsVGE(th)G-EThresholdVoltageIC=20mA,VCE=VGE5.06.08.5VCollectortoEmitterIC=20A